Abstract:A high‐efficiency "interface collaborative strategy", comprising of transferring "doped" electrodes and utilizing polymer modified layer on SiO2 with suitable surface polarity (γsp) is demonstrated that have great advantages in constructing ideal single‐crystal OFETs attributed to tunable injection contact without direct chemical bonding and weakened charge scattering effect, providing some useful guidance to correctly evaluate organic semiconductor materials. The key roles of electrode/semiconductor and semiconductor/dielectric interfaces play in the ideality of organic field‐effect transistors (OFETs) by traditional device preparation technologies are not yet fully understood, which severely limits progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. Herein, at a quantitative level, the origin of nonideal current–voltage (I–V) curves and possibly overestimated mobility in single‐crystal OFETs is revealed, including contact resistance (Rc), charge trapping, and scattering at interfaces of devices. Impressively, an efficient interface collaborative strategy, which consists of transferred "doped" electrodes with tunable contact "doping" localized regions at the source‐drain contacts and polymer‐modified SiO2 with suitable surface polarity (γsp) is further demonstrated that have great advantages in the construction of ideal high mobility devices. Also, an interesting double‐edged sword effect of γsp of dielectric on the ideality of OFETs is observed. The dielectric with a lower γsp can result in higher mobility, while too low γsp would degrade the device ideality due to significant effect of charge scattering. The findings not only provide new perspectives and strategies to construct ideal OFETs but also offer useful guidance to correctly evaluate organic semiconductor materials.

Analytic Models for Organic Field-Effect Transistors Based on Exponential and Power Mobility Models

Nonlinear Injection Model of Organic Field Effect Transistors

A Numerical Study of Organic Field Effect Transistor

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors

Study of Applicability of Boltzmann-Statistics and Two Mobility Models for Organic Semiconductors

Accurate Description of Coulombic Interactions in Organic Field‐Effect Transistors Enabled by Efficient 3D Poisson's Equation Solver with Mixed Boundary Conditions

A Compact Model and Parameter Extraction Method for a Staggered OFET With Power-Law Contact Resistance and Mobility

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Electric-field Enhanced Thermionic Emission Model for Carrier Injection Mechanism of Organic Field-Effect Transistors: Understanding of Contact Resistance

Theory of the field-effect mobility in amorphous organic transistors

DC Compact Model for Subthreshold Operated Organic Field-Effect Transistors

Interface Collaborative Strategy for High Mobility Organic Single‐Crystal Field‐Effect Transistors with Ideal Current–Voltage Curves

Research on Least-Squares Fitting Calculation of the Field-Effect Mobility

Nernst–Planck–Poisson analysis of electrolyte-gated organic field-effect transistors

Modeling of the Electrical Characteristics of an Organic Field Effect Transistor in Presence of the Bending Effects

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors with Steep Subthreshold Swing

Nonideal Double-Slope Effect in Organic Field-Effect Transistors

In-depth Theoretical Analysis of the Influence of an External Electric Field on Charge Transport Parameters.

Surface-Potential-Based Analytical Model of Drain Current of Organic Thin-Film Transistor