Conductance-Dependent Negative Differential Resistance In Organic Memory Devices

Y. T. You,M. L. Wang,H. N. Xuxie,B. Wu,Z. Y. Sun,X. Y. Hou

DOI: https://doi.org/10.1063/1.3524263

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Single-layer organic memories made of organic material with good conductance have been characterized. Asymmetrical bistable behaviors under biases of opposite polarities are observed for devices with asymmetric electrodes. It is experimentally confirmed that a close correlation exists between the conductivity of the organic layer and the asymmetric bistability of the device under opposite biases. Inserting a block layer or thickening the organic layer will result in negative differential resistance under positive biases, leading to reversible symmetrical bistability. The phenomena are ascribed to the presence of filamentary microconducting channels in the organic layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524263]