Doping: A Key Enabler for Organic Transistors

Yong Xu,Hui Sun,Ao Liu,Hui‐Hui Zhu,Wenwu Li,Yen‐Fu Lin,Yong‐Young Noh

DOI: https://doi.org/10.1002/adma.201903846

IF: 29.4

2019-01-01

Advanced Materials

Abstract:Adv. Mater. 2018, 30, 1801830 In article number 1801830, Equation (5) was written incorrectly. The correct format of the equation is:

What problem does this paper attempt to address?

Corrigendum for “A Novel Kinase Subverts Aluminium Resistance by Boosting Ornithine Decarboxylase‐dependent Putrescine Biosynthesis”

Xiang P. Liu,Li J. Gao,Ben T. She,Gui X. Li,Yun R. Wu,Ji M. Xu,Zhong J. Ding,Jian F. Ma,Shao J. Zheng

DOI: https://doi.org/10.1111/pce.14419

2022-01-01

Abstract:In the published article, the author names in the byline which originally appeared as “Xiang P. Liu, Li J. Gao, Ben T. She, Gui X. Li, Yun R. Wu, Ji M. Xu, Zhong J. Ding, Jian F. Ma, Shao J. Zheng” have been corrected to “Xiangpei Liu, Lijun Gao, Bentao She, Guixin Li, Yunrong Wu, Jiming Xu, Zhongjie Ding, Jianfeng Ma, Shaojian Zheng” in the byline and the ORCID ID section. We apologize for this error.
Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Doping: A Key Enabler for Organic Transistors

Yong Xu,Huabin Sun,Ao Liu,Hui‐Hui Zhu,Wenwu Li,Yen‐Fu Lin,Yong‐Young Noh

DOI: https://doi.org/10.1002/adma.201801830

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Organic field‐effect transistors (OFETs) are the central building blocks of organic electronics, but still suffer from low performance and manufacturing difficulties. This is due in part to the absence of doping, which is mostly excluded from OFET applications for the concern about uncontrollable dopant diffusion. Doping enabled the modern semiconductor industry to build essential components like Ohmic contacts and P–N junctions, empowering devices to function as designed. Recent breakthroughs in organic semiconductors and doping techniques demonstrated that doping can also be a key enabler for high‐performance OFETs. However, the knowledge of organic doping remains limited particularly for OFET use. Therefore, this review addresses OFET doping from a device perspective. The paper overviews doping basics and roles in advanced complementary technologies. These fundamentals help to understand why and how doping provides the desired transistor characteristics. Typical OFETs without doping are discussed, with consideration for operating principle and problems caused by the absence of doping. Achievements for channel, contact, and overall doping are also examined to clarify the corresponding doping roles. Finally, doping mechanisms, techniques, and dopants associated with OFET applications are reviewed. This paper promotes fundamental understanding of OFET doping for the development of high‐performance OFETs with doped components.
Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

Wen Shi,Tianqi Zhao,Jinyang Xi,Dong Wang,Zhigang Shuai

DOI: https://doi.org/10.1021/jacs.5b06584

IF: 15

2015-01-01

Journal of the American Chemical Society

Abstract:Tuning carrier concentration via chemical doping is the most successful strategy to optimize the thermoelectric figure of merit. Nevertheless, how the dopants affect charge transport is not completely understood. Here we unravel the doping effects by explicitly including the scattering of charge carriers with dopants on thermoelectric properties of poly(3,4-ethylenedioxythiophene), PEDOT, which is a p-type thermoelectric material with the highest figure of merit reported. We corroborate that the PEDOT exhibits a distinct transition from the aromatic to quinoid-like structure of backbone, and a semiconductor-to-metal transition with an increase in the level of doping. We identify a close-to-unity charge transfer from PEDOT to the dopant, and find that the ionized impurity scattering dominates over the acoustic phonon scattering in the doped PEDOT. By incorporating both scattering mechanisms, the doped PEDOT exhibits mobility, Seebeck coefficient and power factors in very good agreement with the experimental data, and the lightly doped PEDOT exhibits thermoelectric properties superior to the heavily doped one. We reveal that the thermoelectric transport is highly anisotropic in ordered crystals, and suggest to utilize large power factors in the direction of polymer backbone and low lattice thermal conductivity in the stacking and lamellar directions, which is viable in chain-oriented amorphous nanofibers.
Author Correction: CO2 doping of organic interlayers for perovskite solar cells

Jaemin Kong,Yongwoo Shin,Jason A. Röhr,Hang Wang,Juan Meng,Yueshen Wu,Adlai Katzenberg,Geunjin Kim,Dong Young Kim,Tai-De Li,Edward Chau,Francisco Antonio,Tana Siboonruang,Sooncheol Kwon,Kwanghee Lee,Jin Ryoun Kim,Miguel A. Modestino,Hailiang Wang,André D. Taylor

DOI: https://doi.org/10.1038/s41586-021-03839-y

IF: 64.8

2021-09-03

Nature

Abstract:Nature, Published online: 03 September 2021; doi:10.1038/s41586-021-03839-yAuthor Correction: CO2 doping of organic interlayers for perovskite solar cells

multidisciplinary sciences
Beneath the disorder: Unraveling the impacts of doping on organic electronics and thermoelectrics

Andrew Tolton,Zlatan Akšamija

DOI: https://doi.org/10.1557/s43579-024-00628-2

2024-08-31

MRS Communications

Abstract:Organic materials have found widespread applications but require doping to overcome their intrinsically low carrier concentration. Doping injects free carriers into the polymer, moving the position of the Fermi level, and creates coulombic traps, changing the shape of the electronic density of states (DOS). We develop equations to explicitly map the DOS parameters to the Seebeck vs conductivity relationship. At low carrier concentrations, this relationship is a universal slope , while at higher carrier concentrations, the slope becomes dependent on the shape of the DOS. We conclude that, at high doping, a heavy-tailed DOS leads to higher thermoelectric power factors.

materials science, multidisciplinary
Corrigendum: Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions (2015 Nanotechnology 26 335201)

Yating Zhang,Xiaoxian Song,Ran Wang,Mingxuan Cao,Haiyan Wang,Yongli Che,Xin Ding,Jianquan Yao

DOI: https://doi.org/10.1088/1361-6528/abd436

IF: 3.5

2021-09-29

Nanotechnology

Abstract:The figure 1 from our paper (Nanotechnology, 2015. 26(33): 335201) was wrongly replaced during the process of revising the manuscript. And the corrected figure 1 is as follows.In addition, the supplementary materials should add the citation of our another paper (2015 J. Phys. Chem. C,119(37), 21739)

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Correction: Semiconducting Polymer Contributes Favorably to the Seebeck Coefficient in Multi-Component, High-Performance N-Type Thermoelectric Nanocomposites

Junhui Tang,Ruisi Chen,Lidong Chen,Guillermo C. Bazan,Ziqi Liang

DOI: https://doi.org/10.1039/d1ta90185k

IF: 11.9

2021-01-01

Journal of Materials Chemistry A

Abstract:Correction for ‘Semiconducting polymer contributes favorably to the Seebeck coefficient in multi-component, high-performance n-type thermoelectric nanocomposites’ by Junhui Tang et al., J. Mater. Chem. A, 2020, 8, 9797–9805, DOI: 10.1039/d0ta02388d.
Self-Assembled Monolayer Organic Field-Effect Transistors (Retraction Of Vol 413, Vol 713, 2001)

Jan Hendrik Schön,Hong Meng,Zhenan Bao

DOI: https://doi.org/10.1038/nature01464

IF: 64.8

2001-01-01

Nature

Abstract:Nature 413,713–716 (2001). The values of the transconductance in Table 1 and in the text (page 715, second paragraph) are incorrect. The values should be divided by ten. The data plotted in Figs 2 and 3 are correct and the conclusions are not affected.
Correction: Control of aggregation and dissolution of small molecule hole transport layers via a doping strategy for highly efficient perovskite solar cells

Jazib Ali,Jingnan Song,Yu Li,Kun Qian,Quanzeng Zhang,Guanqing Zhou,Ming Zhang,Lei Zhu,Chaoqun Qiu,Jinqiu Xu,Jing Wang,Rizwan Haider,Wei Feng,Hailin Hu,Haiming Zhu,Yongming Zhang,Feng Liu

DOI: https://doi.org/10.1039/d1tc90107a

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘Control of aggregation and dissolution of small molecule hole transport layers via a doping strategy for highly efficient perovskite solar cells’ by Jazib Ali et al. , J. Mater. Chem. C , 2019, 7 , 11932–11942, DOI: 10.1039/C9TC03120K.

materials science, multidisciplinary,physics, applied
Correction to “‘Clickable’ Organic Electrochemical Transistors”

Roger Hasler,Felice Quartinello,Christoph Lorenz,Gonzalo E. Fenoy,Waldemar A. Marmisollé,O. Azzaroni,P. Bäuerle,W. Knoll

DOI: https://doi.org/10.1021/jacsau.2c00703

IF: 8

2023-01-09

JACS Au

Abstract:[This corrects the article DOI: 10.1021/jacsau.2c00515.].
Correction: Phosphine oxide based semiconducting small molecule as an additive and an electron transport layer enables efficient and stable perovskite light-emitting devices

Susmita Mukherjee,Ashutosh Panigrahi,Yen-Hung Lin,Ajay Perumal

DOI: https://doi.org/10.1039/d4tc90028f

IF: 6.4

2024-02-16

Journal of Materials Chemistry C

Abstract:Correction for 'Phosphine oxide based semiconducting small molecule as an additive and an electron transport layer enables efficient and stable perovskite light-emitting devices' by Susmita Mukherjee et al. , J. Mater. Chem. C , 2024, https://doi.org/10.1039/d3tc04461k.

materials science, multidisciplinary,physics, applied
Correction: Valence State‐Dependent Ferromagnetism in Mn‐Doped NiO Thin Films

Yan Wen-Sheng,Zheng Sun,Zhongrui Li,Qinghua Liu,Tao Yao,Zhiyun Pan,Chao Wang,Fengchun Hu,Yong Jiang,Zeming Qi,Fei Zeng,Wei Shi-Qiang

DOI: https://doi.org/10.1002/adma.201290008

IF: 29.4

2012-01-01

Advanced Materials

Abstract:The authors regret two mistakes in Figure 1 and the Experimental Section of the above article published on the Early View platform of Advanced Materials. The correct Figure 1 is: (a) Schematic band structure of transition-metal doped oxide semiconductors with impurity bands induced by structural defects. (b) Partial DOS for NiO: (top panel) with a Ni vacancy, (middle panel) with doped Mn2+, and (bottom panel) with doped Mn3+. Further, the last section of the Experimental Section was missing the institutions at which the experiments were carried out and should read: […] The Mn K-edge X-ray absorption fine structure (XAFS) spectra were collected in fluorescence mode at room temperature at the U7C beamline of National Synchrotron Radiation Laboratory (NSRL), China. The Mn L3-edge and O K-edge X-ray absorption near-edge structure (XANES) spectra were collected in a mode of sample drain current under a vacuum better than 5 × 10−5 Pa at the U19 beamline of NSRL.
Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Chunzi Zhang,Ozan Gunes,Yuanshi Li,Xiaoyu Cui,Masoud Mohammadtaheri,Shi-Jie Wen,Rick Wong,Qiaoqin Yang,Safa Kasap

DOI: https://doi.org/10.3390/ma13225132

IF: 3.4

2020-11-13

Materials

Abstract:The authors would like to correct a typographical error in their paper [...]

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics

Jinghai Li,Adara Babuji,Lamiaa Fijahi,Ann Maria James,Roland Resel,Tommaso Salzillo,Raphael Pfattner,Carmen Ocal,Esther Barrena,Marta Mas-Torrent

DOI: https://doi.org/10.1021/acsami.2c16760

IF: 9.5

2023-01-19

ACS Applied Materials & Interfaces

Abstract:Contact resistance and charge trapping are two key obstacles, often intertwined, that negatively impact on the performance of organic field-effect transistors (OFETs) by reducing the overall device mobility and provoking a nonideal behavior. Here, we expose organic semiconductor (OSC) thin films based on blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8) with polystyrene (PS) to (i) a CH(3)CN vapor annealing process, (ii) a doping I(2)/water procedure, and (iii) vapors of...

materials science, multidisciplinary,nanoscience & nanotechnology
Sodium Doping for Enhanced Performance by Highly Efficient CsPbBr3 Quantum Dot-Based Electroluminescent Light-Emitting Diodes (mar, 10.1039/d1tc05997a, 2022)

Yi Huang,Pengfei Tang,Wenxia Zhang,Wensheng Yan,Bin Liu,Xiaosheng Tang,Zhen Wang,Yue Peng,Weiwei Chen

DOI: https://doi.org/10.1039/d2tc90043b

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Correction for 'Sodium doping for enhanced performance by highly efficient CsPbBr3 quantum dot-based electroluminescent light-emitting diodes' by Yi Huang et al., J. Mater. Chem. C, 2022, DOI: 10.1039/d1tc05997a.
Correction: Surface Organic Ligand-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetimes

Lishuang Wang,Ying Lv,Jie Lin,Jialong Zhao,Xingyuan Liu,Ruosheng Zeng,Xun Wang,Bingsuo Zou

DOI: https://doi.org/10.1039/d2tc90025d

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘Surface organic ligand-passivated quantum dots: toward high-performance light-emitting diodes with long lifetimes’ by Lishuang Wang et al. , J. Mater. Chem. C , 2021, 9 , 2483–2490, DOI: 10.1039/D0TC05391K.
Charge Carrier Mobility: Precise Extraction of Charge Carrier Mobility for Organic Transistors (adv. Funct. Mater. 20/2020)

Yong Xu,Yun Li,Songlin Li,Francis Balestra,Gerard Ghibaudo,Wenwu Li,Yen‐Fu Lin,Huabin Sun,Jing Wan,Xinran Wang,Yufeng Guo,Yi Shi,Yong‐Young Noh

DOI: https://doi.org/10.1002/adfm.202070125

IF: 19

2020-01-01

Advanced Functional Materials

Abstract:Charge carriers (electrons and holes) transport in between the source and drain electrodes in an organic transistor, which is the building block of organic circuits. In article number 1904508, Yong Xu, Huabin Sun, Jing Wan, Yufeng Guo, Yong-Young Noh, and co-workers describe three speedometers that indicate completely different carrier velocities, namely quite different mobilities, in which a variety of errors exist, and hence, warrants precise evaluation for further development.
Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Jeff J P M Schulpen,Cindy H X Lam,Rebecca A Dawley,Ruixue Li,Lun Jin,Tao Ma,Wilhelmus M M Kessels,Steven J Koester,Ageeth A Bol

DOI: https://doi.org/10.1021/acsanm.4c02304

2024-05-07

Abstract:[This corrects the article DOI: 10.1021/acsanm.4c00094.].
Correction: Promoting nitrate electroreduction to ammonia over A-site deficient cobalt-based perovskite oxides

Fulong Liu,Zhenbao Zhang,Lei Shi,Yu Zhang,Xiaoyu Qiu,Yuming Dong,Heqing Jiang,Yongfa Zhu,Jiawei Zhu

DOI: https://doi.org/10.1039/d3ta90088f

IF: 11.9

2023-05-12

Journal of Materials Chemistry A

Abstract:Correction for 'Promoting nitrate electroreduction to ammonia over A-site deficient cobalt-based perovskite oxides' by Fulong Liu et al. , J. Mater. Chem. A , 2023, https://doi.org/10.1039/D3TA01063E.

materials science, multidisciplinary,chemistry, physical,energy & fuels

Doping: A Key Enabler for Organic Transistors

Corrigendum for “A Novel Kinase Subverts Aluminium Resistance by Boosting Ornithine Decarboxylase‐dependent Putrescine Biosynthesis”

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Doping: A Key Enabler for Organic Transistors

Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

Author Correction: CO2 doping of organic interlayers for perovskite solar cells

Beneath the disorder: Unraveling the impacts of doping on organic electronics and thermoelectrics

Corrigendum: Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions (2015 Nanotechnology 26 335201)

Correction: Semiconducting Polymer Contributes Favorably to the Seebeck Coefficient in Multi-Component, High-Performance N-Type Thermoelectric Nanocomposites

Self-Assembled Monolayer Organic Field-Effect Transistors (Retraction Of Vol 413, Vol 713, 2001)

Correction: Control of aggregation and dissolution of small molecule hole transport layers via a doping strategy for highly efficient perovskite solar cells

Correction to “‘Clickable’ Organic Electrochemical Transistors”

Correction: Phosphine oxide based semiconducting small molecule as an additive and an electron transport layer enables efficient and stable perovskite light-emitting devices

Correction: Valence State‐Dependent Ferromagnetism in Mn‐Doped NiO Thin Films

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics

Sodium Doping for Enhanced Performance by Highly Efficient CsPbBr3 Quantum Dot-Based Electroluminescent Light-Emitting Diodes (mar, 10.1039/d1tc05997a, 2022)

Correction: Surface Organic Ligand-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetimes

Charge Carrier Mobility: Precise Extraction of Charge Carrier Mobility for Organic Transistors (adv. Funct. Mater. 20/2020)

Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Correction: Promoting nitrate electroreduction to ammonia over A-site deficient cobalt-based perovskite oxides