Abstract:The electro-thermal performance of silicon nanosheet field-effect transistors (NSFETs) with various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional punch-through stopper, trench inner-spacer (TIS), and bottom oxide (BOX) schemes were investigated from single-device to circuit-level evaluations to avoid overestimating heat's impact on performance. For single-device evaluations, the TIS scheme maintains the device temperature 59.6 and 50.4 K lower than the BOX scheme for n/pFETs, respectively, due to the low thermal conductivity of BOX. However, when the over-etched S/D recess depth (TSD) exceeds 2 nm in the TIS scheme, the RC delay becomes larger than that of the BOX scheme due to increased gate capacitance (Cgg) as the TSD increases. A higher TIS height prevents the Cgg increase and exhibits the best electro-thermal performance at single-device operation. Circuit-level evaluations are conducted with ring oscillators using 3D mixed-mode simulation. Although TIS and BOX schemes have similar oscillation frequencies, the TIS scheme has a slightly lower device temperature. This thermal superiority of the TIS scheme becomes more pronounced as the load capacitance (CL) increases. As CL increases from 1 to 10 fF, the temperature difference between TIS and BOX schemes widens from 1.5 to 4.8 K. Therefore, the TIS scheme is most suitable for controlling trpbt and improving electro-thermal performance in sub-3 nm node NSFETs.

Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Corrections to “predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [oct 11 3379-3387]

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Corrigendum for “A Novel Kinase Subverts Aluminium Resistance by Boosting Ornithine Decarboxylase‐dependent Putrescine Biosynthesis”

Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Corrections to “high Performance Si Nanowire TFTs with Ultrahigh On/Off Current Ratio and Steep Subthreshold Swing” [jan 20 46-49]

Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review”

Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors

Corrigendum: Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions (2015 Nanotechnology 26 335201)

Erratum to “Evolver: a Deep Learning Processor With On-Device Quantization-Voltage-Frequency Tuning” [Feb 21 658-673]

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]

Author Correction: Elastic Pseudospin Transport for Integratable Topological Phononic Circuits

Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Erratum: Growth of Conformal Graphene Cages on Micrometre-Sized Silicon Particles As Stable Battery Anodes

Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Correction to “trench Termination with SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-Sic Devices” [dec 18 1900-1903]

Erratum: Capacitively Coupled Arrays of Multiplexed Flexible Silicon Transistors for Long-Term Cardiac Electrophysiology

Correction to “‘Clickable’ Organic Electrochemical Transistors”

Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction