Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

Correction to “trench Termination with SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-Sic Devices” [dec 18 1900-1903]

Trench Termination with SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-Sic Devices

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Corrections to "Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal"

Erratum: Good Structural Stability of Si Anodes Achieved through Dispersant Addition and Use of Carbon Fabric as Conductive Framework [ J. Electrochem. Soc., 168, 060517 (2021)]

Correction: Two-dimensional Polar Metal of a PbTe Monolayer by Electrostatic Doping.

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Correction: the Effect of Device Geometry and Crystal Orientation on the Stress-Dependent Offset Voltage of 3c–sic(100) Four Terminal Devices

Design, Fabrication and Characterization of Mesa Combined with JTE Termination for High-Voltage 4h–sic PiN Diodes

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′-2H heterojunctions (Journal of Materials Chemistry C (2018) DOI: 10.1039/c8tc01106k)

Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

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Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review”

Correction to “synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons with Various Energies” [jun 15 1375-1382]

Correction to “surface Passivation Properties of HfO2 Thin Film on N-Type Crystalline Si” [mar 17 479-485]

Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

Corrections to “predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [oct 11 3379-3387]