Corrections to “predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [oct 11 3379-3387]

Jibin Zou,Qiumin Xu,Jianjun Luo,Runsheng Wang,Ru Huang,Yangyuan Wang

DOI: https://doi.org/10.1109/ted.2011.2178417

2012-01-01

Abstract:In the above titled paper (ibid., vol. 58, no. 10. pp. 3379-3387, Oct. 2011), there were several typo errors or missing symbols. Corrections are presented here.

What problem does this paper attempt to address?

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Predictive 3-D modeling of parasitic gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs

Jibin Zou,Qiumin Xu,Jieying Lou,Runsheng Wang,Ru Huang,Yangyuan Wang

DOI: https://doi.org/10.1109/TED.2011.2162521

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, an analytical model for parasitic gate capacitances in gate-all-around cylindrical silicon nanowire MOSFETs (SNWTs) is developed for the first time. A practical 3-D architecture of SNWTs with surrounding-gate cylindrical channel and source/drain extension regions is taken into account in the parasitic gate capacitance modeling. The parasitic gate capacitances of the SNWT are divided...
Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Jinsu Jeong,Jun-Sik Yoon,Sanguk Lee,Rock-Hyun Baek

DOI: https://doi.org/10.1109/ted.2024.3394728

IF: 3.1

2024-06-21

IEEE Transactions on Electron Devices

Abstract:In the above article [1], certain parts of Figs. 1 and 3 were either written incorrectly or missing. The proper figures are provided here.

engineering, electrical & electronic,physics, applied
Predictive Modeling of Capacitance and Resistance in Gate-All-around Cylindrical Nanowire MOSFETs for Parasitic Design Optimization

Qiumin Xu,Jibin Zou,Jieyin Luo,Runsheng Wang

DOI: https://doi.org/10.1109/icsict.2010.5667822

2010-01-01

Abstract:This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow source/drain extension (SDE) doping profile. The proposed non-iterative electrostatic model is successfully verified, and can be used to predict nanowire-based circuit performance. Based on the analytical model, we can further examine which parasitic components are affecting the delay. Results revealed that Cside, Cof, Rsd, RQ are dominant factors and should be treated as a major design concern. Among all the parameters, Lsd, Tg and Ndop are essentially important in parasitic design optimization. By selectively modifying these parameters, parasitic effect is evidently reduced.
Corrigendum to “from Phenotype to Gene: Detecting Disease‐specific Gene Functional Modules Via a Text‐based Human Disease Phenotype Network Construction” [FEBS Lett. 584 (2010) 3635–3643]

Shihua Zhang,Chao Wu,Xia Li,Xi Chen,Wei Jiang,Binsheng Gong,Li Jiang,Yuqing Yan

DOI: https://doi.org/10.1016/j.febslet.2012.12.013

2012-01-01

FEBS Letters

Abstract:The name of the first author was misspelled. The correct name should read: Shihua Zhang.
Correction: Li, S. Et Al. Research on a Power Management System for Thermoelectric Generators to Drive Wireless Sensors on a Spindle Unit. Sensors 2014, 14, 12701–12714

Sheng Li,Xinhua Yao,Jianzhong Fu

DOI: https://doi.org/10.3390/s150820541

IF: 3.9

2015-01-01

Sensors

Abstract:The authors wish to make the following corrections to this paper [1]. [...]
Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]

Nian-Ke Chen,Xian-Bin Li,Xue-Peng Wang,Sheng-Yi Xie,Wei Quan Tian,Shengbai Zhang,Hong-Bo Sun

DOI: https://doi.org/10.1109/TNANO.2018.2823098

2018-01-01

IEEE Transactions on Nanotechnology

Abstract:Presents corrections to the paper, “Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study,” (Chen, N.-K.), IEEE Trans. Nanotechnol., vol. 17, no. 1, pp. 140–146, Jan. 2018.
Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Yang Zhao,Chunlei Wu,Qianqian Huang,Cheng Chen,Jiadi Zhu,Lingyi Guo,Rundong Jia,Zhu Lv,Yuchao Yang,Ming Li,Ru Huang

DOI: https://doi.org/10.1109/led.2018.2810758

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:In the above paper, there is an error in the information of corresponding author’s email address. The corrected corresponding author’s email address information is provided.
Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

Lu Bin,Wang Da-Wei,Chen Yu-Lei,Cui Yan,Miao Yuan-Hao,Dong Lin-Peng

DOI: https://doi.org/10.7498/aps.70.20211128

IF: 0.906

2021-01-01

Acta Physica Sinica

Abstract:The nanowire gate-all-around (GAA) structures with the nearly ultimate channel electrostatic integrity of the gate field can exhibit the best immunity to the short channel effect and drain-induced barrier lowering. Moreover, owing to the enhanced control efficiency of gate over the tunneling junction, the GAA-TFET also gives improved subthreshold swing and on-state current. Despite the excellent device performance, an accurate model is very significant for the practical application. Compared with the numerical methods which are usually time consuming and computationally inefficient, an analytical model could accelerate the device investigation and circuit design process. Even though some tunneling current models have already been reported for nanowire tunneling field-effect-transistors (TFETs), the model of the terminal capacitance is still an issue for nanowire TFETs. The capacitance is of great significance for the transient simulation. In this paper, a physical and analytical potential model considering both the source depletion region and the channel mobile charges, is developed for the GAA-TFETs. The results from the model are verified with the numerical simulations, and the excellent agreement between the two results indicates the validation of the proposed model. Based on the potential model, the terminal charge model and the capacitance model are further developed and also verified by the numerical simulations. The main inflection and variation of the terminal charges and capacitances with the biases can be predicted by our model. Besides, both the model results and the numerical simulations both demonstrate that the gate charge is dominated mainly by the drain charges and the contribution of the source charges can be almost neglected. This also leads to the very small gate-source capacitance and very large Miller capacitance in the TFET device. This will be detrimental to the performance of TFET-based digital circuits but can be mitigated with the hetero-oxide gate structure. The second order effects, such as the quantum confinement and traps, are ignored in this paper and can be taken into the core model in the future work. It should also be noted that there is no iterative process involved during the model derivation, thus the developed model can be easily applied to the widely used SPICE platform and will be useful in designing and investigating the GAA-TFET based circuits.
Corrections to “high Performance Si Nanowire TFTs with Ultrahigh On/Off Current Ratio and Steep Subthreshold Swing” [jan 20 46-49]

Huaxiang Yin,Huafeng Yang,Shuang Xu,Danfeng Pan,Jun Xu,Kunji Chen,Linwei Yu

DOI: https://doi.org/10.1109/led.2020.3016380

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In the referenced article, the corresponding authors should be Danfeng Pan (pdf@nju.edu.cn) and Linwei Yu (yulinwei@nju.edu.cn).
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review”

Yao-Jen Lee,Ta-Chun Cho,Shang-Shiun Chuang,Fu-Kuo Hsueh,Yu-Lun Lu,Po-Jung Sung,Hsiu-Chih Chen,Michael I. Current,Tseung-Yuen Tseng,Tien-Sheng Chao,Chenming Hu,Fu-Liang Yang

DOI: https://doi.org/10.1109/ted.2023.3272843

IF: 3.1

2023-07-01

IEEE Transactions on Electron Devices

Abstract:The above article [1] presented data on microwave annealing of implanted ions in silicon. There are several typos in the figure captions and labels, and the authors would like to correct them. The text is correct, and the conclusion of [1] is not impacted by these revisions.

engineering, electrical & electronic,physics, applied
Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′-2H heterojunctions (Journal of Materials Chemistry C (2018) DOI: 10.1039/c8tc01106k)

Liu Shiqi,Li Jingzhen,Shi Bowen,Zhang Xiuying,Pan Yuanyuan,Ye Meng,Quhe Ruge,Wang Yangyang,Zhang Han,Yan Jiahuan,Xu Linqiang,Guo Ying,Pan Feng,Lu Jing

DOI: https://doi.org/10.1039/c8tc90116c

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:The authors regret that an incorrect description was used in the computational details section. The sentence 'A periodic type, a Neumann type and a Dirichlet type boundary condition are used in the x, y and z directions of the device (Fig. 4), respectively. ' should read ' A Neumann type, a Periodic type and a Dirichlet type boundary condition are used in the x, y and z directions of the device (Fig. 4), respectively. ' The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers. © The Royal Society of Chemistry 2018.
Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Chunzi Zhang,Ozan Gunes,Yuanshi Li,Xiaoyu Cui,Masoud Mohammadtaheri,Shi-Jie Wen,Rick Wong,Qiaoqin Yang,Safa Kasap

DOI: https://doi.org/10.3390/ma13225132

IF: 3.4

2020-11-13

Materials

Abstract:The authors would like to correct a typographical error in their paper [...]

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Bin Lu,Hongliang Lu,Yuming Zhang,Yimen Zhang,Xiaoran Cui,Zhijun Lv,Shi-Zheng Yang,Chen Liu

DOI: https://doi.org/10.1109/TED.2017.2775341

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:Based on an analytical surface potential and a simple mathematical approximation for the source depletion width, a physics-based capacitance model with closed form for silicon double-gate tunnel field-effect transistors (TFETs) is developed. Good agreements between the proposed model and the numerical simulations have been achieved, which reveal that the tunneling carriers from source have negligi...
Erratum to: Swimming Behavior Analysis Based on Bacterial Chemotaxis in Solution

Bin He,Zhipeng Wang,Chaoqun Liu,Yonggang Li,Runjie Shen

DOI: https://doi.org/10.1016/s1672-6529(12)60192-9

IF: 2.995

2012-01-01

Journal of Bionic Engineering

Abstract:Fig. 6 of Ref. [ 1 ] (page 317) should be replaced by the figure in the right, in which the words “cathode” and “anode” are exchanged. Also on the same page the following corrections should be made: Left column, line 7 from the bottom, “cathode anode” should be replaced by “anode and cathode”; Right column, line 5 from the top, “anode” should be replace by “cathode”, and “cathode” should be replace by “anode”. Fig. 6 Circular electrolysis device (On actual PCB board, anode and cathode at different layer on the board). The authors apologize for the mistakes in their original manuscript.
Correction: Corrigendum: on the Speed of Piezostrain-Mediated Voltage-Driven Perpendicular Magnetization Reversal: a Computational Elastodynamics-Micromagnetic Phase-Field Study

Peng, Ren-Ci,Hu, Jia-Mian,Chen, Long-Qing,Nan, Ce-Wen

DOI: https://doi.org/10.1038/am.2017.193

IF: 10.761

2017-01-01

NPG Asia Materials

Abstract:After online publication of this article, the authors noticed a typographical error in the main text under the Methods section. On the bottom right of Page 3, the original text ‘…, c12=93.46 × 1011 GPa …’ should read as ‘…, c12=93.46 GPa …’ The authors apologize for any inconvenience caused. The error has been corrected in the HTML and PDF versions of the article.
Erratum: Growth of Conformal Graphene Cages on Micrometre-Sized Silicon Particles As Stable Battery Anodes

Yuzhang Li,Kai Yan,Hyun-Wook Lee,Zhenda Lu,Nian Liu,Yi Cui

DOI: https://doi.org/10.1038/nenergy.2016.17

IF: 56.7

2016-01-01

Nature Energy

Abstract:Nature Energy 1, 15029 (2016); published 25 January 2016; corrected 1 February 2016. In the version of this Article originally published, Fig. 5b contained a typographical error and the separation between the dashed lines in the right panel should have been labelled 17.2 μm. This has been corrected 1 February 2016.
Correction: Corrigendum: Full 180° Magnetization Reversal with Electric Fields

J. J. Wang,Jia‐Mian Hu,Jianglin Ma,Jianhua Zhang,L. Q. Chen,Ce‐Wen Nan

DOI: https://doi.org/10.1038/srep21444

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 4: Article number: 7507; published online: 16 December 2014; updated: 25 February 2016. This Article contains a typographical error in a grant number in the Acknowledgements section. “This work was supported by the NSF of China (Grant Nos. 51332001, 11234005, 51472140 and 51221291), and the NSF (Grant No: DMR-1410714, DMR-0820404, and DMR-1210588).
Gate-Capacitance-Shift Approach and Compact Modeling for Quantum Mechanical Effects in Poly-Gates

Dawei Zhang,Hao Zhang,Lilin Tian,Zhiping Yu

DOI: https://doi.org/10.3969/j.issn.1674-4926.2004.12.011

2004-01-01

Abstract:A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.
Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

J. P. Sun,Wei Wang,Toru Toyabe,Ning Gu,Pinaki Mazumder

DOI: https://doi.org/10.1109/ted.2006.885637

IF: 3.1

2006-01-01

IEEE Transactions on Electron Devices

Abstract:By applying a fully self-consistent solution of the Schrodinger-Poisson equations, a simple unified approach has been developed in order to study the gate current and gate capacitance of nanoscale-MOS structures with ultrathin dielectric layer. In this paper, the model has been employed to investigate various gate structure and material combinations, thereby demonstrating wide applicability of the present model in the design of nanoscale-MOSFET devices. The results obtained by applying the proposed model are in good agreement with experimental data and previous models in the literature. A new result concerning optimum nitrogen content in HfSiON high-k gate-dielectric structure reported in this paper requires experimental verification through device fabrication.

Corrections to “predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [oct 11 3379-3387]

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Predictive 3-D modeling of parasitic gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs

Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Predictive Modeling of Capacitance and Resistance in Gate-All-around Cylindrical Nanowire MOSFETs for Parasitic Design Optimization

Corrigendum to “from Phenotype to Gene: Detecting Disease‐specific Gene Functional Modules Via a Text‐based Human Disease Phenotype Network Construction” [FEBS Lett. 584 (2010) 3635–3643]

Correction: Li, S. Et Al. Research on a Power Management System for Thermoelectric Generators to Drive Wireless Sensors on a Spindle Unit. Sensors 2014, 14, 12701–12714

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]

Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

Corrections to “high Performance Si Nanowire TFTs with Ultrahigh On/Off Current Ratio and Steep Subthreshold Swing” [jan 20 46-49]

Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review”

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′-2H heterojunctions (Journal of Materials Chemistry C (2018) DOI: 10.1039/c8tc01106k)

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Erratum to: Swimming Behavior Analysis Based on Bacterial Chemotaxis in Solution

Correction: Corrigendum: on the Speed of Piezostrain-Mediated Voltage-Driven Perpendicular Magnetization Reversal: a Computational Elastodynamics-Micromagnetic Phase-Field Study

Erratum: Growth of Conformal Graphene Cages on Micrometre-Sized Silicon Particles As Stable Battery Anodes

Correction: Corrigendum: Full 180° Magnetization Reversal with Electric Fields

Gate-Capacitance-Shift Approach and Compact Modeling for Quantum Mechanical Effects in Poly-Gates

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures