Corrections to “high Performance Si Nanowire TFTs with Ultrahigh On/Off Current Ratio and Steep Subthreshold Swing” [jan 20 46-49]

Huaxiang Yin,Huafeng Yang,Shuang Xu,Danfeng Pan,Jun Xu,Kunji Chen,Linwei Yu

DOI: https://doi.org/10.1109/led.2020.3016380

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In the referenced article, the corresponding authors should be Danfeng Pan (pdf@nju.edu.cn) and Linwei Yu (yulinwei@nju.edu.cn).

What problem does this paper attempt to address?

Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Yang Zhao,Chunlei Wu,Qianqian Huang,Cheng Chen,Jiadi Zhu,Lingyi Guo,Rundong Jia,Zhu Lv,Yuchao Yang,Ming Li,Ru Huang

DOI: https://doi.org/10.1109/led.2018.2810758

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:In the above paper, there is an error in the information of corresponding author’s email address. The corrected corresponding author’s email address information is provided.
Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review”

Yao-Jen Lee,Ta-Chun Cho,Shang-Shiun Chuang,Fu-Kuo Hsueh,Yu-Lun Lu,Po-Jung Sung,Hsiu-Chih Chen,Michael I. Current,Tseung-Yuen Tseng,Tien-Sheng Chao,Chenming Hu,Fu-Liang Yang

DOI: https://doi.org/10.1109/ted.2023.3272843

IF: 3.1

2023-07-01

IEEE Transactions on Electron Devices

Abstract:The above article [1] presented data on microwave annealing of implanted ions in silicon. There are several typos in the figure captions and labels, and the authors would like to correct them. The text is correct, and the conclusion of [1] is not impacted by these revisions.

engineering, electrical & electronic,physics, applied
Corrections to “highly Sensitive Flexible Pressure Sensor by the Integration of Microstructured PDMS Film with A-Igzo TFTs” [jul 18 1073-1076]

Xin Chen,Longlong Chen,Tongkuai Li,Zhihan Zhang,Tingting Zhao,Xifeng Li,Jianhua Zhang

DOI: https://doi.org/10.1109/led.2018.2854438

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:In [1] , the name of the first author was transposed and should have read Xin Chen. The authors regret their error.
Correction to “quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor” [nov 14 3762-3767]

Tatsuya Toda,Dapeng Wang,Jingxin Jiang,Mai Phi Hung,Mamoru Furuta

DOI: https://doi.org/10.1109/ted.2014.2374978

IF: 3.1

2015-01-01

IEEE Transactions on Electron Devices

Abstract:In the above paper [1] , co-author D. Wang’s name was incorrectly spelled in both the biography and the byline. The correct spelling is Dapeng Wang.
Correction to “surface Passivation Properties of HfO2 Thin Film on N-Type Crystalline Si” [mar 17 479-485]

Xuemei Cheng,Päivikki Repo,Halvard Haug,Alexander Pyymaki Perros,Erik Stensrud Marstein,Marisa Di Sabatino,Hele Savin

DOI: https://doi.org/10.1109/jphotov.2017.2698718

2017-01-01

IEEE Journal of Photovoltaics

Abstract:Presents corrections to the paper, "Surface passivation properties of HfO2 thin ﬁlm on n-type crystalline Si,” (Chengetal, X.), IEEE J. Photovolt., vol. 7, no. 2, pp. 479–485, Mar. 2017.
Erratum to “critical Influence of Carbon Nitride Self-assembly Coating on the Electrochemical Performance of SnO2-TiO2 Nanocomposite Anode Material for Lithium Ion Battery[Int. J. Electrochem. Sci., 11 (2016) 2461-2472]”

Yangang Wang,Xiang Ding,Lihua Huang,Yangling Xu,Yuanhui Zuo,Shifei Kang,Lifeng Cui

DOI: https://doi.org/10.1016/s1452-3981(23)16178-5

IF: 1.541

2016-01-01

International Journal of Electrochemical Science

Abstract:This is an erratum regarding the published article (Int. J. Electrochem. Sci., 11 (2016) 2461- 2472), which has a mistake in the AUTHORS INFORMATION part.
Erratum To: N-doped Graphene Quantum Dots-Functionalized Titanium Dioxide Nanofibers and Their Highly Efficient Photocurrent Response

Xiaotian Wang,Dandan Ling,Yueming Wang,Huan Long,Yibai Sun,Yanqiong Shi,Yuchao Chen,Yao Jing,Yueming Sun,Yunqian Dai

DOI: https://doi.org/10.1557/jmr.2014.152

IF: 2.7

2014-01-01

Journal of Materials Research

Abstract:In Wang et al.^1, the first corresponding author is listed incorrectly as Yibai Sun.^a) The correct author to whom correspondence should be addressed is Yueming Sun.^a) The email address indicated remains the same: ^a)email: Sun@seu.edu.cn.
Corrections to &Amp;#x201c;electro-Optical Modulation Processes in Si-PMOSFET LEDs Operating in the Avalanche Light Emission Mode&#x201D; [jun 14 2085-2092]

Kaikai Xu,Weifeng Sun,G.P. Li

DOI: https://doi.org/10.1109/ted.2014.2328932

IF: 3.1

2014-01-01

IEEE Transactions on Electron Devices

Abstract:In the above paper , the author has discovered an oversight in authorship. The authorship should be changed to Kaikai Xu, Weifeng Sun, and G. P. Li.
Correction: Corrigendum: Growth of Semiconducting Single-Wall Carbon Nanotubes with a Narrow Band-Gap Distribution

Zhang, Feng,Hou, Peng-Xiang,Liu, Chang,Wang, Bing-Wei,Jiang, Hua,Chen, Mao-Lin,Sun, Dong-Ming,Li, Jin-Cheng,Cong, Hong-Tao,Kauppinen, Esko I.,Cheng, Hui-Ming

DOI: https://doi.org/10.1038/ncomms11563

IF: 16.6

2016-01-01

Nature Communications

Abstract:Nature Communications 7: Article number: 11160 (2016); Published 30 March 2016; Updated 27 April 2016 This Article contains an error in Fig. 6. In Fig. 6a, the units on the y-axis should be ‘μA’ not ‘mA’.
Correction: Ionic-liquid-bifunctional Wrapping of Ultrafine SnO2 Nanocrystals into N-doped Graphene Networks: High Pseudocapacitive Sodium Storage and High-Performance Sodium-Ion Full Cells.

Yan Yang,Zhen-Zhen Pan,Ying-Ying Wang,Yuan-Chuan Ma,Chong Li,Yu-Jun Lu,Xing-Long Wu

DOI: https://doi.org/10.1039/c9nr90160d

IF: 6.7

2019-01-01

Nanoscale

Abstract:Correction for ‘Ionic-liquid-bifunctional wrapping of ultrafine SnO2 nanocrystals into N-doped graphene networks: high pseudocapacitive sodium storage and high-performance sodium-ion full cells’ by Yan Yang et al., Nanoscale, 2019, DOI: 10.1039/c9nr02542a.
Corrections to “film Stress Influence on Nb/Al-AlOx/Nb Josephson Junctions” [aug 19 Article No. 1102105]

Yu Wu,Liliang Ying,Guanqun Li,Xue Zhang,Wei Peng,Jie Ren,Zhen Wang

DOI: https://doi.org/10.1109/tasc.2020.3048886

IF: 1.9489

2021-01-01

IEEE Transactions on Applied Superconductivity

Abstract:Presents changes to author information in the above named paper.
Correction To: Structural Evolution of Vertically Oriented Graphene Nanosheet Templating Ni–Co Hydroxide As Pseudocapacitive Electrode

Pingge He,Boyun Huang,Qun Huang,Tengfei Chen,Qiangqing Zhang

DOI: https://doi.org/10.1007/s10853-018-2504-0

IF: 4.5

2018-01-01

Journal of Materials Science

Abstract:In the original article author name Qiangqiang Zhang was misspelled. It is correct here.
Correction To: Wafer-Scale Fabrication of Sub-10 Nm TiO2-Ga2O3 N-P Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Hongyan Xu,Feng Han,Chengkai Xia,Siyan Wang,Ranish M. Ramachandran,Christophe Detavernier,Minsong Wei,Liwei Lin,Serge Zhuiykov

DOI: https://doi.org/10.1186/s11671-019-3028-5

2019-01-01

Nanoscale Research Letters

Abstract:Please be advised that the name of one of the coauthors in the original article [1] has been incorrectly spelled: ‘Ranish M. Ramachandran’ should be ‘Ranjith K. Ramachandran’.
Correction: Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method

Hao Hong,Jiangtao Wei,Xin Lei,Haiyun Chen,Pasqualina M Sarro,Guoqi Zhang,Zewen Liu

DOI: https://doi.org/10.1038/s41378-023-00564-6

2023-07-25

Abstract:[This corrects the article DOI: 10.1038/s41378-023-00532-0.].
Corrections to “enhanced Performance Love Wave Magnetic Field Sensors with Temperature Compensation” [oct 20 11292-11301]

Yang,Harshad Mishra,Prince Mengue,Sami Hage‐Ali,S. Petit-Watelot,Daniel Lacour,Michel Hehn,Hamid M’Jahed,Tao Han,O. Elmazria

DOI: https://doi.org/10.1109/jsen.2020.3030288

IF: 4.3

2021-01-01

IEEE Sensors Journal

Abstract:In the above article [1] , by Yang et al. , published in IEEE Sensors Journal, volume 20, issue 19, pp. 11292–11301, in 2020, we would like to correct the coauthor Daniel Lacour’s biography on page 11300.
Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Yen‐Hung Lin,Hendrik Faber,Kui Zhao,Qingxiao Wang,Aram Amassian,Martyn A. McLachlan,Thomas D. Anthopoulos

DOI: https://doi.org/10.1002/adma.201303701

IF: 29.4

2013-01-01

Advanced Materials

Abstract:In the above paper, one affiliation for author Yen-Hung Lin was missing: Yen-Hung Lin, Dutch Polymer Institute (DPI), P.O. Box 902, 5600 AX Eindhoven, The Netherlands The authors apologize for this inconvenience.
Corrections to “predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [oct 11 3379-3387]

Jibin Zou,Qiumin Xu,Jianjun Luo,Runsheng Wang,Ru Huang,Yangyuan Wang

DOI: https://doi.org/10.1109/ted.2011.2178417

2012-01-01

Abstract:In the above titled paper (ibid., vol. 58, no. 10. pp. 3379-3387, Oct. 2011), there were several typo errors or missing symbols. Corrections are presented here.
Correction: Individual Single-Crystal Nanowires As Electrodes for Organic Single-Crystal Nanodevices

Guorui Wang,Qingxin Tang,Yanhong Tong,Wenping Hu,Yichun Liu

DOI: https://doi.org/10.1039/c5tc90164b

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘Individual single-crystal nanowires as electrodes for organic single-crystal nanodevices’ by Guorui Wang et al., J. Mater. Chem. C, 2015, DOI: 10.1039/c5tc01920f.
Correction to “surface Passivation Properties of HfO2 Thin Film on N-Type Crystalline Si”

Xuemei Cheng,Päivikki Repo,H. Haug,Alexander Pyymaki Perros,Erik Stensrud Marstein,Marisa Di Sabatino,Hele Savin

2017-01-01

IEEE Journal of Photovoltaics

Abstract:Presents corrections to the paper, Surface passivation properties of HfO2 thin ﬁlm on n-type crystalline Si,” (Chengetal, X.), IEEE J. Photovolt., vol. 7, no. 2, pp. 479–485, Mar. 2017.

Corrections to “high Performance Si Nanowire TFTs with Ultrahigh On/Off Current Ratio and Steep Subthreshold Swing” [jan 20 46-49]

Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review”

Corrections to “highly Sensitive Flexible Pressure Sensor by the Integration of Microstructured PDMS Film with A-Igzo TFTs” [jul 18 1073-1076]

Correction to “quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor” [nov 14 3762-3767]

Correction to “surface Passivation Properties of HfO2 Thin Film on N-Type Crystalline Si” [mar 17 479-485]

Erratum to “critical Influence of Carbon Nitride Self-assembly Coating on the Electrochemical Performance of SnO2-TiO2 Nanocomposite Anode Material for Lithium Ion Battery[Int. J. Electrochem. Sci., 11 (2016) 2461-2472]”

Erratum To: N-doped Graphene Quantum Dots-Functionalized Titanium Dioxide Nanofibers and Their Highly Efficient Photocurrent Response

Corrections to &Amp;#x201c;electro-Optical Modulation Processes in Si-PMOSFET LEDs Operating in the Avalanche Light Emission Mode&amp;#x201D; [jun 14 2085-2092]

Correction: Corrigendum: Growth of Semiconducting Single-Wall Carbon Nanotubes with a Narrow Band-Gap Distribution

Correction: Ionic-liquid-bifunctional Wrapping of Ultrafine SnO2 Nanocrystals into N-doped Graphene Networks: High Pseudocapacitive Sodium Storage and High-Performance Sodium-Ion Full Cells.

Corrections to “film Stress Influence on Nb/Al-AlOx/Nb Josephson Junctions” [aug 19 Article No. 1102105]

Correction To: Structural Evolution of Vertically Oriented Graphene Nanosheet Templating Ni–Co Hydroxide As Pseudocapacitive Electrode

Correction To: Wafer-Scale Fabrication of Sub-10 Nm TiO2-Ga2O3 N-P Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Correction: Study on the controllability of the fabrication of single-crystal silicon nanopores/nanoslits with a fast-stop ionic current-monitored TSWE method

Corrections to “enhanced Performance Love Wave Magnetic Field Sensors with Temperature Compensation” [oct 20 11292-11301]

Correction: High‐Performance ZnO Transistors Processed Via an Aqueous Carbon‐Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Corrections to “predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs” [oct 11 3379-3387]

Correction: Individual Single-Crystal Nanowires As Electrodes for Organic Single-Crystal Nanodevices

Correction to “surface Passivation Properties of HfO2 Thin Film on N-Type Crystalline Si”

Corrections to &Amp;#x201c;electro-Optical Modulation Processes in Si-PMOSFET LEDs Operating in the Avalanche Light Emission Mode” [jun 14 2085-2092]