Design and Fabrication of DC-18GHz Microwave Power Thin Film Resistors

SI Xu,ZHANG Wan-li,JIANG Hong-chuan,PENG Bin,WANG Chao-jie,LI Yan-rong
DOI: https://doi.org/10.14183/j.cnki.1005-6122.2011.01.002
2011-01-01
Abstract:Microwave power thin film resistors with DC-18GHz operating frequency and 20W power load were designed and simulated by HFSS and ePhysics.According to the simulation results,the TaN microwave power thin film resistors were fabricated by reactive magnetron sputtering.The simulation results show that the VSWR of the designed thin film resistor at the frequency range of DC-18GHz is less than 1.2.The maximum surface temperature of the resistor is 108℃ when 20W microwave power is applied to the thin film resistor.The experimental results show that the VSWR of the TaN thin film resistor is less than 1.25 at the frequency range of DC-18GHz.The variation of the resistance of the TaN thin film resistor is less than 2% when 20W DC power is applied to it for 96 hours.The maximum surface temperature of the resistor is 105℃ during power load measuring;The TCR of the TaN film resistors is-40 ppm /℃ in the temperature range of 25℃-125℃.
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