Microwave Power Thin Film Resistors for High Frequency and High Power Load Applications

H. C. Jiang,X. Si,W. L. Zhang,C. J. Wang,B. Peng,Y. R. Li
DOI: https://doi.org/10.1063/1.3507883
IF: 4
2010-01-01
Applied Physics Letters
Abstract:The authors report a power-dividing-based microwave power thin film resistor (MPTFR) that exhibits high operating frequency and high power load. The MPTFR is comprised of substrate, ground electrodes, two TaN resistive films, power dividing circuit and signal input port. The experimental results show that the voltage standing wave ratio of the MPTFR is lower than 1.6 in the band of 3.4–7.4 GHz and 8.2–9.8 GHz. The power load of the MPTFR is 200 W. The experimental data are in good agreement with the electromagnetic simulations.
What problem does this paper attempt to address?