Abstract:Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize single phase $\alpha$-Ta on several different substrates, which include Al$\mathrm{_2}$O$\mathrm{_3}$(0001), Si(001), Si(111), SiN${_x}$, and GaAs(001). The substrates are actively cooled down to cryogenic temperatures and remain < 20 K during the Ta deposition. X-ray $\theta$-2$\theta$ diffraction after warming to room temperature indicates the formation of polycrystalline $\alpha$-Ta. The 50 nm $\alpha$-Ta films grown on Al$\mathrm{_2}$O$\mathrm{_3}$(0001) at a substrate manipulator temperature of 7 K have a room temperature resistivity ($\mathrm{\rho _{300 K}}$) of 13.4 $\mathrm{\mu \Omega}$cm, a residual resistivity ratio (RRR) of 17.3 and a superconducting transition temperature (T$_C$) of 4.14 K, which are comparable to bulk values. In addition, atomic force microscopy (AFM) indicates that the film grown at 7 K with an RMS roughness of 0.45 nm was significantly smoother than the one grown at room temperature. Similar properties are found for films grown on other substrates. Results for films grown at higher substrate manipulator temperatures show higher $\mathrm{\rho _{300 K}}$, lower RRR and Tc, and increased $\beta$-Ta content. Coplanar waveguide resonators with a gap width of 3 $\mathrm{\mu}$m fabricated from cryogenically grown Ta on Si(111) and Al$\mathrm{_2}$O$\mathrm{_3}$(0001) show low power Q$_i$ of 1.9 million and 0.7 million, respectively, indicating polycrystalline $\alpha$-Ta films may be promising for superconducting qubit applications even though they are not fully epitaxial.

Tantalum Microwave Resonators with Ultra-High Intrinsic Quality Factors

Microwave characterization of tantalum superconducting resonators on silicon substrate with niobium buffer layer

Tantalum thin films sputtered on silicon and on different seed layers: material characterization and coplanar waveguide resonator performance

Growth and Structure of alpha-Ta films for Quantum Circuit Integration

Investigation of the deposition of $α$-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit

Athermal high-Q tantalum-pentoxide-based microresonators on silicon substrates

Minimizing Kinetic Inductance in Tantalum-Based Superconducting Coplanar Waveguide Resonators for Alleviating Frequency Fluctuation Issues

High-quality superconducting α-Ta film sputtered on heated silicon substrate

Heterogeneous integration of lithium tantalate thin film on quartz for high performance surface acoustic wave resonator

Single-Crystalline LiTaO 3 Film-Based High-Frequency Surface Acoustic Wave Resonators and Electronics Applications

Low-loss α-tantalum coplanar waveguide resonators on silicon wafers: fabrication, characterization and surface modification

Tantalum airbridges for scalable superconducting quantum processors

Two-Level Systems in Nucleated and Non-Nucleated Epitaxial alpha-Tantalum films

High-quality-factor Optical Microresonators Fabricated on Lithium Niobate Thin Film with an Electro-Optical Tuning Range Spanning over One Free Spectral Range [Invited]

alpha-Ta Films on c-plane Sapphire with Enhanced Microstructure

High Q Dielectric Titanium Tellurite Thick Films on Alumina Substrates for High Frequency Telecommunications

High-Q Tantalum Oxide Nanomechanical Resonators by Laser-Oxidation of TaSe2

Cryogenic growth of tantalum thin films for low-loss superconducting circuits

High Quality Factor Superconducting Coplanar Waveguide Fabricated with Tin

Planar superconducting resonators with internal quality factors above one million