Integration of microwave termination based on TaN thin films on ferrite substrates

dainan zhang,liang ji,j kolodzey
DOI: https://doi.org/10.1051/epjap/2015140497
2015-01-01
Abstract:Integration of microwave discrete devices such as isolators and circulators is highly desired for radar and communication platforms and in particular as components used in transmit and receive (T/R) modules. In those applications, Tantalum nitride (TaN) films are widely used as a surface mounted termination to improve the reliability and performance. In the current work, TaN thin films were directly deposited on polycrystalline ferrite substrate (Ni0.3Zn0.7Fe2O4) to be integrated with isolators or circulators. The deposition conditions were first optimized to obtain suitable sheet resistance and near zero temperature coefficients of resistance (TCR). Next a 50 Omega microwave termination was designed and fabricated using standard photolithography techniques. Broadband measurements show that the terminator has a low voltage standing wave ratio (VSWR) of less than 1.20 in the frequency range of DC-20 GHz. The measured resistance was between 48 and 54 Omega.
What problem does this paper attempt to address?