Transferrable AlGaN/GaN HEMTs to Arbitrary Substrates via a Two-dimensional Boron Nitride Release Layer
Michael J. Motala,Eric Blanton,Al Hilton,Eric Heller,Chris Muratore,Katherine Burzynski,Jeff Brown,Kelson Chabak,Michael Durstock,Michael Snure,Nicholas Glavin
DOI: https://doi.org/10.48550/arXiv.2002.02839
2020-02-07
Applied Physics
Abstract:Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal, and flexible electronics. Using a two-dimensional (2D) boron nitride (BN) release layer, we demonstrate the transfer of AlGaN/GaN high-electron mobility transistors (HEMTs) to arbitrary substrates through both direct van der Waals (vdW) bonding and with a polymer adhesive interlayer. No device degradation was observed due to the transfer process, and a significant reduction in device temperature (327 {\deg}C to 132 {\deg}C at 600 mW) was observed when directly bonded to a silicon carbide (SiC) wafer relative to the starting wafer. With the use of a benzocyclobutene (BCB) adhesion interlayer, devices were easily transferred and characterized on Kapton and ceramic films, representing an exciting opportunity for integration onto arbitrary substrates. Upon reduction of this polymer adhesive layer thickness, the AlGaN/GaN HEMTs transferred onto a BCB/SiC substrate resulted in comparable peak temperatures during operation at powers as high as 600 mW to the as-grown wafer, revealing that by optimizing interlayer characteristics such as thickness and thermal conductivity, transferrable devices on polymer layers can still improve performance outputs.