Abstract:This brief investigates the influence of a <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-shaped gate in extending the microwave performance of a thin GaN buffer AlGaN/GaN HEMT. A well-calibrated simulation deck based on the in-house fabricated thin GaN HEMT demonstrates better reliability when a <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-shaped gate is coupled with a thin GaN buffer. The sample has been investigated under different operating conditions with a specific focus on RF power performance. The modification in the gate architecture results in the enhancement of both the OFF-state breakdown characteristics and thermal reliability for continuous wave (CW) mode operation. The pulsed characteristics of <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-gate demonstrate a lower degree of current slump thereby improving the pulsed mode operation of the devices under test (DUT). This opens up the bottleneck for the GaN HEMT device to be operated at a higher voltage and exhibit higher power densities when benchmarked against their conventional counterparts all the while ensuring modest tradeoffs to the current and device gain metrics. The results presented point toward the possibility of further mitigating the dispersive trapping effects on the RF performance of a GaN HEMT by coupling a <inline-formula> <tex-math notation="LaTeX">$\Pi $ </tex-math></inline-formula>-shaped gate with a thin GaN buffer.

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Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films

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High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Integration of Ferroelectrics with III-N Transistors for High Performance Millimeter-Wave Applications

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxcf_4$ Plasma Treatment

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

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Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

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AlGaN/GaN HEMTs with thermal oxidation treatment for microwave power applications