Abstract:The combination of ultrathin-barrier (UTB) AlGaN (<; 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recessfree enhancement-mode (E-mode) power switches. The LPCVD-SiN x passivation is capable of inducing high density of positive charges at the SiN x /(Al)GaN interface (~3.50 × 10 13 cm -2 ), ensuring efficient recovery of 2-D electron gas (2-DEG) density that is comparable with conventional AlGaN/GaN heterostructure. Temperature-dependent Hall measurements and scattering mechanism simulations confirm the positive interfacial charges as well as interface states with density below 10 13 cm -2 and exert weak remote coulombic scattering of 2-DEG in metal-insulator- semiconductor heterojunction field-effect transistors (MIS-HFETs), which warrants a low ON-resistance of UTBAlGaN/GaN-based devices. UTB-AlGaN (<; 6 nm)/GaN heterostructure with LPCVD-SiN x passivation is a compelling technology platform for fabrication of high-frequency power amplifiers and high-efficiency E-mode power switches.

Integration Of&gt;tex&lt;$hbox Ba_xhbox Sr_1-xhbox TiO_3$&gt;/tex&lt;Thin Films with AlGaN/GaN HEMT Circuits

Integration of Ba Sr TiO Thin Films With AlGaN/GaN HEMT Circuits

Integration of Ba/sub X/sr/sub 1-X/tio/sub 3/ Thin Films with AlGaN/GaN HEMT Circuits

Integration of BaxSr1-xTiO3 thin films with AlGaN/GaN HEMT circuits

Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films

Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with BaxSr1-xTiO3 thin films

Textured BST Thin Film on Silicon Substrate: Preparation and Its Applications for High Frequency Tunable Devices

Tunable Microwave Integrated Circuits Using Bst Thin Film Capacitors With Device Structure Optimization

Hetero-integration of Quasi Two-Dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and Non-Volatile Modulation of Two-Dimensional Electron Gas

High Performance Distributed CPW Phase Shifters with Etched BST Thin Films on Ф 3″ LaAlO3 Substrates

High Tunable Ba<SUB Align="right">0.5sr<sub Align="right">0.5tio<sub Align="right">3 Thin Film Deposited on Silicon Substrate with MgO Buffer Layer

A Planar Integration Process For E/D-Mode Algan/Gan Hemt Dcfl Integrated Circuits

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Monolithic Integration of Enhancement/depletion-Mode High Electron Mobility Transistors Using Hydrogen Plasma Treatment

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxcf_4$ Plasma Treatment

The Interfacial Characteristics of Ba0.6Sr0.4TiO3 Films Deposited by Radio Frequency Magnetron Sputtering

The interfacial characteristics of Ba0.6Sr0.4TiO 3 films deposited by radio frequency magnetron sputtering

The Interfacial Structures of (ba, Sr)Tio3 Films Deposited by Radio Frequency Magnetron Sputtering

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode Algan/Gan High Electron Mobility Transistors

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Integration Of&amp;gt;tex&amp;lt;$hbox Ba_xhbox Sr_1-xhbox TiO_3$&amp;gt;/tex&amp;lt;Thin Films with AlGaN/GaN HEMT Circuits