Abstract:Tantalum silicate (Ta–Si–O) thin film materials have gained significant interest in hybrid renewable energy systems and thin-film resistors due to their exceptional thermal stability and adjustable electrical properties. In this study, we investigated the effects of target compositions and sputtering power densities on the material structures, chemical compositions, microstructures, and electrical properties of Ta–Si–O films. Two target compositions, Ta 65 (SiO 2 ) 35 and Ta 80 (SiO 2 ) 20 , were utilized in the deposition process. Notably, we observed substantial variations in the temperature coefficient of resistance (TCR) value and resistivity of Ta–Si–O thin films with different Ta concentrations. Most importantly, when the Ta content of the film is controlled at 62 ± 0.6 % by using this target, the resistivity of the Ta 0.62 Si 0.20 O 0.18 film can be as small as 2.31 ± 0.05 × 10 −4 Ω-cm and has an extremely small TCR of 22 ± 0.4 ppm/°C, which shows an excellent opportunity for the development of precision thin film resistors. A TCR value close to zero can be finely tuned by controlling the Ta concentration in the Ta–Si–O film. These intriguing electrical behaviors were found to be highly correlated with the predominant formation of metallic Ta 5 Si 3 as the main structural phase in the films. This work presents a simple and effective approach to produce Ta–Si–O thin films with near-zero TCR, making them highly suitable for applications under high-temperature conditions. Our findings contribute to the development of tailored thin film materials with desirable electrical properties for advanced electronic and energy devices.

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