Effect of Thickness Scaling on the Permeability and Thermal Stability of Ta(N) Diffusion Barrier
Haoyu Xu,Zheng-Jun Hu,Xin-Ping Qu,Hao Wan,Shen-Suo Yan,Ming Li,Shou-Mian Chen,Yu-Hang Zhao,Jing Zhang,Mikhail R. Baklanov
DOI: https://doi.org/10.1016/j.apsusc.2019.143887
IF: 6.7
2019-01-01
Applied Surface Science
Abstract:Molecular and atomic permeability, thermal stability and interfacial reactions of ultrathin Ta, TaN and Ta/TaN stack as barrier to Cu/low -k interconnects have been studied. It is shown the barrier layers containing TaN and Ta/TaN have good thermal stability and barrier properties when their thickness is> 3.5 nm while Ta cannot withstand 450 degrees C annealing. The thinner barriers are permeable for neutral molecules like heptane and demonstrate degradation of resistivity during the thermal anneal at 450 degrees C. Penetration of Ta precursors into low-k and formation of TaO/TaC type of bonds increase the dielectric function of low-k dielectric. Our results show that, on the low-k material with 23% porosity and 0.9 nm pore radius, the PVD deposited Ta( N) films< 3.5 nm thick have poor barrier function and are sufficient for neutral molecules penetration, especially water molecules.