Influence of room-temperature oxidation on stability and performance of reactively sputtered TaN thin films for high-precision sheet resistors
Mingzhen Zhang,Yue Wang,Shangzhi Song,Ruiqiang Guo,Wenbin Zhang,Chengming Li,Junjun Wei,Puqing Jiang,Ronggui Yang
DOI: https://doi.org/10.1016/j.surfin.2024.104088
IF: 6.2
2024-03-01
Surfaces and Interfaces
Abstract:Reactively sputtered tantalum nitride (TaN) thin films are used extensively in high-precision chip resistors because of their near-zero temperature coefficients of resistance (TCR). Passivation is usually necessary to ensure the long-term stability of the films. However, the inevitable room-temperature oxidation of TaN films before resistor device passivation poses a challenge. The impact of room-temperature oxidation on the stability and properties of TaN thin films intended for use in resistors remains unclear. This work systematically studies the room-temperature oxidation of reactively sputtered TaN thin films with varying nitrogen contents, represented by nitrogen flow ratios during film deposition. Results suggest that among different nitrogen flow ratios of 2%, 3%, 5%, and 7%, the films sputtered with a 3% N 2 flow ratio are predominantly composed of the Ta 2 N phase, exhibiting the most stable structure and properties. These films demonstrate unaffected TCR, resistance, and thermal conductivity even upon exposure to air. In contrast, films prepared with other N 2 contents are prone to room-temperature oxidation, leading to noticeable degradation in TCR and a reduction in lattice thermal conductivities. Notably, the electrical resistances of different films show little susceptibility to room-temperature oxidation. This work contributes essential insights into the effects of short-term room-temperature oxidation on the properties of TaN films and can have a great impact on their applications in high-precision sheet resistors.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films