Abstract:The ratio of I(Hα*)/I(SiH*), obtained from the real time optical emission spectroscopy (OES) measurement in the high-rate microcrystalline silicon deposition process, as a function of time is used to analyze the cause of increasing crystallinity along the growth direction. Hydrogen dilution gradient method which means silane concentration gradient and hydrogen flow gradient method is adopted to improve vertical structure uniformity of the material. High-quality microcrystalline material around 53%-62% of Xc can be prepared through silane concentration gradient compared with 55%-75% of Xc prepared in the traditional method. In the silane depleted cases, by increasing the hydrogen flow the longitudinal uniformity of the material can be effectively improved. The vertical crystallinity around 53%-60% can be obtained. This is mainly due to the increase of the hydrogen flow that makes the collision probability increased, as a result, electron temperature of plasma reduced. Thus, the decomposition of hydrogen decreases and the reaction of hydrogen annihilation is suppressed. At the same time, the influence of back diffusion of SiH4 is suppressed. The gradually increasing trend of the ratio of I(Hα*)/I(SiH*) is controlled during the deposition of microcrystalline silicon film.

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Real Time and Ex Situ Spectroscopic Ellipsometry Analysis Microcrystalline Silicon Thin Films Growth

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A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

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Analysis of the microstructure of laser crystallized hydrogenated amorphous silicon films by spectroscopic ellipsometry

Preparation of ultrathin microcrystalline silicon layers by atomic hydrogen etching of amorphous silicon and end‐point detection by real time spectroellipsometry

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

Optical Study of Silicon-Containing Amorphous Hydrogenated Carbon

Analysis of Dielectric Function of Silicon Films with Spectroscopic Ellipsometry

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Analysis on Steady Plasma Process of High-Rate Microcrystalline Silicon by Optical Emission Spectroscopy

Optical and Photoelectrical Characterization of As-Deposited and Annealed Pecvd Polysilicon Thin Films

Elucidation of microstructure of single-phase microcrystalline silicon based on crystallite size distributions

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

Sp(3)/Sp(2) Ratio in Amorphous-Carbon Thin Film by Spectroscopic Ellipsometry