Abstract:Sc0.18Al0.82N/GaN with state-of-the-art x-ray diffraction figures of merit grown by metal modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 °C is demonstrated to have improved crystalline order [250 arc sec for the (0002) reflection and 469 arc sec for the (101 ̄5)] compared to a previous state-of-the-art sample grown at a more conventional temperature of 650 °C. While both samples show a columnar structure, the higher substrate temperature sample has a good symmetric rocking curve (RC) of 229 arc sec, but unlike the lower temperature sample, the RC of the (101 ̄5) asymmetric reflection could not be measured, indicating a more columnar structure common among ScAlN films. Local lattice constant maps (LLCMs) from 4D-STEM depict abrupt strain relaxation within ∼2 nm from the ScAlN/GaN interface for the sample grown at Tsub = 400 °C. Since these LLCMs suggest a lattice mismatch in the a-lattice constant, and since the films show a sudden roughening, the composition for lattice match to GaN may be less than the accepted 18%–20% Sc, consistent with the average GaN lattice match from lattice constant values reported in the literature of 12%. Compared to traditional III-Nitrides, ScAlN films have substantially more screw and mixed-type threading dislocations, suggesting substantial shear forces that result in significant twist and distortion leading to orthorhombic diffraction patterns as viewed from plan-view TEM in the Tsub = 650 °C sample. These results offer the possibility of ScAlN integration into low-thermal-budget processes including CMOS but further indicate that structural understanding of ScAlN remains lacking.

Improvement of Crystal Quality of GaN Grown on AlN Template by MOCVD Using HT‐AlN Interlayer [phys. Status Solidi C 6, No. S2, S317–S320 (2009)]

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Crystalline Quality Improvement of GaN Coalesced Using Nano‐pss with Void‐embedded Nanostructure by MOVPE

Gan Grown on Ain/Sapphire Templates

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Correction: Epitaxial Growth of GaN Films on Unconventional Oxide Substrates

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Four-inch High Quality Crack-Free AlN Layer Grown on a High-Temperature Annealed AlN Template by MOCVD

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Growth of High Al Content AlGaN Epilayer by MOCVD

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions

Structural Properties, Crystal Quality and Growth Modes of Mocvd-Grown Aln with Tmal Pretreatment of Sapphire Substrate

High quality GaN films on miscut (1 1 1) diamond substrates through non-c orientation suppression