Improvement of thick InGaN template by thin InGaN buffer grown at low temperature

Zhao, Wei,Wang, Lai,GuangYi Xi,Hongtao Li,Yang Jiang,Yanjun Han,Yi Luo

DOI: https://doi.org/10.1109/INOW.2008.4634501

2008-01-01

Abstract:Thick InGaN templates with an without InGaN buffer were grown using MOCVD method. It is demonstrated that the crystal quality of the InGaN template can be efficiently improved by the InGaN buffer layer.

What problem does this paper attempt to address?

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Shi Linyu,Zhang Jincheng,Wang Hao,Xue Junshuai,Ou Xinxiu,Fu Xiaofan,Chen Ke,Hao Yue

DOI: https://doi.org/10.1088/1674-4926/31/12/123001

2010-01-01

Journal of Semiconductors

Abstract:>We study the growth of an InGaN and AlGaN/GaN/InGaN/GaN double heterojunction structure by metal organic chemical vapor deposition(MOCVD).It is found that the crystal quality of the InGaN back barrier layer significantly affects the electronic property of the AlGaN/GaN/InGaN/GaN double heterojunction.A high crystal quality InGaN layer is obtained by optimizing the growth pressure and temperature.Due to the InGaN layer polarization field opposite to that in the AlGaN layer,an additional potential barrier is formed between the GaN and the InGaN layer, which enhances carrier confinement of the 2DEG and reduces the buffer leakage current of devices.The double heterojunction high-electron-mobility transistors with an InGaN back barrier yield a drain induced barrier lowering of 1.5 mV/V and the off-sate source-drain leakage current is as low as 2.6μA/mm at V DS = 10 V.
Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Kai Chen,Yachao Zhang,Jincheng Zhang,Xing Wang,Yixin Yao,Jinbang Ma,Yue Hao

DOI: https://doi.org/10.1016/j.ceramint.2022.08.176

IF: 5.532

2022-12-01

Ceramics International

Abstract:High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC substrate. By analyzing growth modes of GaN films on AlN buffer layers with different thicknesses, it is revealed that film-forming point of GaN grown on AlN buffer increases with the increase in AlN buffer thickness. Accordingly, new growth model of GaN on AlN buffer was proposed, which shows that there is an optimal matching value between Ga source flow rate and AlN thickness when GaN is grown on AlN buffer of different thicknesses. Under optimal conditions, AlGaN/GaN/AlN heterostructures with 120 nm thin GaN channel layer and thick AlN buffer show excellent carrier-limited domain, high crystalline quality, and good transport properties. Results in this work would be useful for preparing high-quality heterostructures on AlN buffer and high electron mobility transistor (HEMT) devices. Moreover, these findings can also be applied to the growth of other hyperfine structures (quantum wells, superlattices, and digital alloys) in the future.

materials science, ceramics
Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers

Huyin Zhao,Xuefei Li,Ming Tan,Wenxian Yang,Tieshi Wei,Shulong Lu

DOI: https://doi.org/10.2139/ssrn.4662661

IF: 1.8

2024-02-24

Journal of Crystal Growth

Abstract:In this paper, the effect of low-temperature buffer layer on the quality of InGaAs grown on GaP/Si templates is investigated. Three different materials, InP, GaAs/InAs and InAs/InP, were grown on GaP/Si templates by molecular beam epitaxy (MBE). The interfacial states between the above materials and the GaP layer were calculated using first principles methods. It was found that the interfacial structure formed with the InAs/InP material was the most robust due to the shorter bond lengths and stronger interaction forces between the interfaces. Theoretical calculations are in agreement with the experimental results that the InGaAs grown using the InAs/InP digital alloy structure as a low temperature buffer layer has the best material quality.

materials science, multidisciplinary,physics, applied,crystallography
High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Yuxia Feng,Huarui Sun,Xuelin Yang,Kang Liu,Jie Zhang,Jianfei Shen,Danshuo Liu,Zidong Cai,Fujun Xu,Ning Tang,Tongjun Yu,Xinqiang Wang,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1063/5.0037796

IF: 4

2021-02-01

Applied Physics Letters

Abstract:High quality GaN films on SiC with low thermal boundary resistance (TBR) are achieved by employing an ultrathin low Al content AlGaN buffer layer. Compared with the conventional thick AlN buffer layer, the ultrathin buffer layer can not only improve the crystal quality of the subsequent GaN layer but also reduce the TBR at the GaN/SiC interface simultaneously. The ultrathin AlGaN buffer layer is introduced by performing a pretreatment of the SiC substrate with trimethylaluminum followed by the growth of GaN with an enhanced lateral growth rate. The enhanced lateral growth rate contributes to the formation of basal plane stacking faults (BSFs) in the GaN layer, where the BSFs can significantly reduce the threading dislocation density. We reveal underling mechanisms of reducing TBR and dislocation density by the ultrathin buffer layer. We propose this work is of great importance toward the performance improvement and cost reduction of higher power GaN-on-SiC electronics.

physics, applied
Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Haiyan Wang,Zeqi Lin,Binhao Qin,Yupeng Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2024.127958

IF: 1.8

2024-10-22

Journal of Crystal Growth

Abstract:GaN epitaxial films were grown on Si substrates by ex situ two-step method combining the technologies of pulsed laser deposition (PLD) and metal organic chemical vapor deposition (MOCVD). The N/Al ratio of high-temperature AlN (HT-AlN) buffer layer was optimized, and its influence on the HT-AlN growth mode as well as the quality of GaN epitaxial films was investigated. When the N/Al ratio was 500, the two-dimensional growth of HT-AlN was greatly enhanced, and it obtained a coalesced and smooth surface with the minimum RMS surface roughness as 1.63 nm. The as-grown GaN epitaxial film had the best crystalline quality with the minimum full-width at half maximums of GaN(0002) and GaN(10 1 ̄ 2) as 0.14° and 0.22°, respectively. Owing to the high energy of PLD, the ex situ low-temperature AlN template had an abrupt Si/AlN interface and flat surface, which was of significance to improve the quality of HT-AlN buffer and GaN film.

materials science, multidisciplinary,physics, applied,crystallography
Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Y. B. Tao,Z. Z. Chen,T. J. Yu,Y. Yin,X. N. Kang,Z. J. Yang,G. Z. Ran,G. Y. Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2010.10.031

IF: 1.8

2011-01-01

Journal of Crystal Growth

Abstract:InGaN/GaN quantum wells (QWs) with symmetrical ultra thin (about 0.5nm) low temperature GaN (LT-GaN) layers bounding each InGaN layer were grown by metal-organic vapor phase epitaxy (MOVPE). From the high resolution X-ray diffraction (HR-XRD) measurement, it showed improved well-barrier interface abruptness compared to the reference MQWs without the LT-GaN layers. In addition, the V-defect density and surface roughness were reduced, especially with the depth of V-defect as low as 0.7nm. Based on the temperature dependence photoluminescence (TDPL) experiments, the internal quantum efficiency (IQE) was increased from 21.2% to 30.1% by inserting the LT-GaN layers. The carrier lifetime obtained from room temperature time resolved photoluminescence (TRPL) measurement was 7.95ns, which was longer than 5.34ns for reference MQWs. These results indicated that these additional symmetrical thin LT-GaN layers enhanced the mobility of indium and gallium atoms as well as suppressed the indium desorption for growth high quality InGaN layers and in turn improved its structural and luminescence properties.
Influence of growth process of GaN HT buffer layer on InGaN/GaN MQWs

Lai Wang,Yi Luo,Hongtao Li,GuangYi Xi,Yang Jiang,Changzheng Sun,Zhibiao Hao,Yanjun Han

2006-01-01

Abstract:Bulk GaN and InGaN/GaN multiple quantum wells (MQWs) were grown on (0001) sapphire substrate by metal organic vapor phase epitaxy (MOVPE). By optimizing the growth process of the high temperature buffer layer, the surface root-mean-square roughness of bulk GaN and InGaN/GaN MQWs decreased obviously. Furthermore the temperature dependence of the photoluminescence spectra were measured to estimate the internal quantum efficiency (IQE) of InGaN/GaN MQWs. An 82% increase of IQE is obtained according to the Arrhenius model.
High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Lisheng Zhang,Fujun Xu,Mingxing Wang,Yuanhao Sun,Nan Xie,Tao Wang,Boyu Dong,Zhixin Qin,Xinqiang Wang,Bo Shen

DOI: https://doi.org/10.1016/j.spmi.2017.03.013

IF: 3.22

2017-01-01

Superlattices and Microstructures

Abstract:In this work, a novel strategy for high-quality AlN templates epitaxy on sapphire substrates with sputtered buffer layers combined with a low- and high-temperature alteration technique is proposed. The best full width at half maximum values for (0002) and (11¯02) reflections are 207 and 377 arcsec, respectively. Investigations indicate the joint effect of growth mode control and sputtered buffer layer results in the improvement of AlN crystalline quality. Firstly, threading dislocations density can be significantly decreased due to the alteration from three-dimensional to two-dimensional growth mode. Moreover, the graded composition of AlON layer in the sputtered buffer layer is believed to alleviate lattice mismatch between sapphire substrates and AlN, which also contributes to low dislocations density in AlN templates.
Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

L.W. Lu,W.K. Fong,C.F. Zhu,B.H. Leung,C. Surya,J. Wang,Weikun Ge

DOI: https://doi.org/10.1016/S0022-0248(01)01664-5

IF: 1.8

2002-01-01

Journal of Crystal Growth

Abstract:A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690°C, and a conventional low-temperature buffer layer deposited at 500°C. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377cm2V−1s−1 for an ITBL thickness of 800nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at Ec−0.40eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25μm in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films.
Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Junbo Wang,Xiangdong Li,Zhibo Cheng,Tao Zhang,Wenyong Zhou,Long Chen,Ye Yuan,Tongxin Lu,Lezhi Wang,Zilan Li,Shuzhen You,Xinqiang Wang,Yue Hao,Jincheng Zhang

DOI: https://doi.org/10.1109/ted.2024.3466841

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:Single-crystalline AlN templates are a promising substrate choice for GaN power HEMTs, which have, however, seldom been investigated. In this work, high-performance GaN HEMTs on 2-in AlN templates are successfully demonstrated and evaluated. The buffer lateral leakage was significantly suppressed by five orders of magnitude by epitaxially growing an AlN nucleation layer to deactivate the impurities of Si and O, which are introduced at the interface of buffer/AlN template during the secondary epitaxy. An exceptionally high lateral blocking voltage exceeding 10 kV was attained with a spacing of 100 mu m. HEMTs without any field plate structure showcase an outstanding breakdown voltage of over 8 kV and an on/off ratio of 10(9). The dynamic R-ON degradation is limited to be within 20%, and the threshold voltage V-th exhibits a 10% shift after off-state stress. High-performance GaN HEMTs demonstrated in this work prove that the single-crystalline AlN templates are promising for future high-reliability power HEMTs.
The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Nanliu Liu,Qi Wang,Xiaoping Zheng,Shunfeng Li,Yilmaz Dikme,Huan Xiong,Yanzhao Pang,Guoyi Zhang

DOI: https://doi.org/10.1016/j.jcrysgro.2018.07.014

IF: 1.8

2018-01-01

Journal of Crystal Growth

Abstract:In this paper, 2–4 in. GaN wafers with high crystal quality were obtained with optimized V/III ratio of source gases on the patterned sapphire substrate (PSS) covered by a sputtered thin AlN buffer layer by using hydride vapor phase epitaxy (HVPE) growth technology. It was found that the morphology and crystal quality of the top GaN layer were significantly different with the variation of V/III ratio of source gases in initial nucleation growth step. Transparent single crystalline GaN layer could be obtained under relatively low V/III ratio of source gases, while it transferred to yellow and polycrystalline structure with increasing of V/III ratio of source gases. This is mainly attributed to the significant transition of GaN nucleation process with different crystallographic plane of AlN buffer layer, and corresponding variation of GaN growth mode at different V/III ratio of source gases, supported by surface, lateral SEM characterization, high-resolution X-ray diffraction (XRD) measurement, and detailed growth mechanism analysis. Moreover, the crystal quality of GaN grown under optimized condition can be further improved by increasing the thickness of GaN. It would offer a simple way to obtain GaN templates with high crystal quality at relatively low cost.
Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐free AlGaN/GaN Heterostructures

Ding-Yuan Chen,Kai-Hsin Wen,Mattias Thorsell,Martino Lorenzini,Hans Hjelmgren,Jr-Tai Chen,Niklas Rorsman

DOI: https://doi.org/10.1002/pssa.202200496

2022-10-08

Abstract:The 2DEG confinement on HEMT heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free AlN nucleation layer is studied. This is the first time demonstration of a buffer‐free epi‐structure grown with metal organic chemical vapor deposition (MOCVD) with thin GaN channel thicknesses, ranging from 250 nm to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm‐1 and maximum saturated drain currents above 1 A mm‐1. A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back‐barrier. An excellent drain‐induced barrier lowering (DIBL) of only 20 mV V‐1 at a VDS of 25 V and an outstanding critical electric field of 0.95 MV cm‐1 are demonstrated. Good large‐signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm‐1 and associated power‐added efficiencies of 56 and 40 % are obtained at a VDS of 15 and 25 V, respectively. These results demonstrate the potential of sub‐100 nm gate length HEMTs on a buffer‐free GaN‐on‐SiC heterostructure. This article is protected by copyright. All rights reserved.
Influence of low-V/III intermediate layer on GaN grown on patterned sapphire substrate by MOVPE

Jiang Yang,Luo, Yi,Wang, Lai,Li Hongtao,Xi Guangyi,Zhao Wei,Han Yanjun

DOI: https://doi.org/10.1109/INOW.2007.4302959

2007-01-01

Abstract:By inserting a low-V/III intermediate layer between bulk GaN and initial growth layer, the crystal quality of GaN grown on patterned sapphire substrate (PSS) by MOVPE was improved, which can be explained by dislocation bending mechanism.
Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Jiadong Yu,Zhibiao Hao,Jian Wang,Jun Deng,Wangyang Yu,Lai Wang,Yi Luo,Yanjun Han,Changzheng Sun,Bing Xiong,Hongtao Li

DOI: https://doi.org/10.1016/j.jallcom.2019.01.007

IF: 6.2

2019-01-01

Journal of Alloys and Compounds

Abstract:Growth of III-nitrides on non-single-crystalline substrates at low growth temperature will greatly benefit the development of large-scale and flexible display/lighting technologies. Two-dimensional (2D) materials such as graphene and hexagonal boron nitride have the similar in-plane lattice arrangements to III-nitrides, hence III-nitrides can be grown on non-single-crystalline substrates by Van der Waals epitaxy through insertion of 2D material layers. In this paper, the growth of AlN buffer layer has been studied in order to obtain high-quality GaN film on graphene/copper sheet using molecular beam epitaxy at low growth temperature. The results reveal that the lateral coalescence of the AlN buffer layer is crucial in the initial stages of Van der Waals epitaxy. At low growth temperature, the migration enhanced epitaxy mode is an effect way to significantly enhance the lateral coalescence of AlN buffer layer on the surface of the graphene insertion layer. By adopting the AlN buffer layer as a template, unstrained GaN single-crystalline film is obtained on graphene/copper sheet at 530 degrees C. This result is believed to be applicable to Van der Waals epitaxy of III-nitride on other 2D material/non-single-crystalline substrates, which is a promising candidate for developing transferable and flexible devices. (C) 2019 Elsevier B.V. All rights reserved.
Effect of different buffer layers on the quality of InGaN layers grown on Si

V. J. Gómez,J. Grandal,A. Núñez-Cascajero,F. B. Naranjo,M. Varela,M. A. Sánchez-García,E. Calleja

DOI: https://doi.org/10.48550/arXiv.1908.11175

2019-08-29

Applied Physics

Abstract:This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Z. L. Xie,R. Zhang,B. Liu,L. Li,C. X. Liu,X. Q. Xiu,H. Zhao,P. Han,S. L. Gu,Y. Shi,Y. D. Zheng

DOI: https://doi.org/10.1016/j.jcrysgro.2006.11.026

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:This paper reports the high mobility InN film grown by MOCVD with GaN buffer layer on sapphire substrates. Different buffer layers are used in our experiments. These buffer layers included the annealing sapphire substrate, the low-temperature GaN layer (LT-GaN), the high-temperature GaN layer (HT-GaN) and the complex buffer layer with HT-GaN on LT-GaN. The crystalline quality of the InN film is sensitive to the underlying buffer layer when the film is grown under the high effect V/III ratio condition. And the growth conditions are optimized in our system. We employed the three-step buffer layer with HT-GaN and LT-GaN on annealing sapphire. The mirror like layers on 2in sapphire wafers was obtained. The structure, optical and electrical characteristics of InN was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), photoluminescence (PL) and IR optical absorption. The PL and the absorption studies of the materials reveal a marked energy band gaps structure around 0.70eV, at room temperature. The uniformity of morphology and the electrical property of the grown InN film are markedly improved by using the complex buffer layer with HT-GaN and LT-GaN on the annealing sapphire. The InN film grown by this buffer layer has the carrier concentration of 3.9×1018cm−3 and the Hall mobility of 939cm2/Vs.
The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Yangfeng Li,Xiaotao Hu,Yimeng Song,Zhaole Su,Haiqiang Jia,Wenxin Wang,Yang Jiang,Hong Chen

DOI: https://doi.org/10.1016/j.mssp.2021.106423

IF: 4.1

2022-04-01

Materials Science in Semiconductor Processing

Abstract:The influence of temperature of nitridation and AlN buffer layer growth on N-polar gallium nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal organic chemical vapour deposition (MOCVD) is investigated in this study. A medium temperature (1000 °C) leads to a relatively rougher surface but improved crystalline quality, enhanced optical performance, and higher electron mobility. The relatively stronger yellow luminescence and weaker near-band-edge (NBE) emission of the N-polar GaN undergoing a high temperature (1110 °C) nitridation and AlN buffer layer growth may be attributed to the increase of gallium vacancies, which is further confirmed by the relatively lower electron concentration. The sublinear excitation power dependence of the NBE emission may refer to the trion emission formed by the defect-bounded excitons.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Influence of MO-GaN templates on the HVPE growth of semi-polar GaN thick films

Lin Zhang,Jiejun Wu,Tong Han,Fang Liu,Mengda Li,Xingyu Zhu,Qiyue Zhao,Tongjun Yu

DOI: https://doi.org/10.1039/d1ce00040c

IF: 3.756

2021-01-01

CrystEngComm

Abstract:This work illustrates the influence of MO-templates and competition mechanism on the HVPE growth of semi-polar GaN (11−22) & (10−13) thick layers.

chemistry, multidisciplinary,crystallography
Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Zhiwen Liang,Ye Yuan,Pengwei Wang,JunJie Kang,Qi Wang,Guoyi Zhang

DOI: https://doi.org/10.1088/1361-6463/aca106

2022-01-01

Abstract:The ex situ sputtered AlN buffer and GaN epilayer grown on top of it by metalorganic chemical vapor deposition were studied comprehensively by a variety of techniques including atomic force microscope, high resolution x-ray diffraction, Raman and x-ray photoelectron spectroscopy characterizations. It exhibited that the AlN buffer deposited by using sputtering technique could be oxidized with exposure in atmosphere. Such oxidation phenomenon significantly influences the characteristics of GaN epilayer, for example leading to poor surface morphology, high dislocation density, and large compressive stress. This study demonstrated the effect of oxygen impurities on GaN growth and has an important guiding significance for the growth of high-quality III-nitride related materials.
Improvement of Crystal Quality of GaN Grown on AlN Template by MOCVD Using HT‐AlN Interlayer [phys. Status Solidi C 6, No. S2, S317–S320 (2009)]

Tao Yuebin,Chen Zhizhong,Yang Zhijian,Sang Liwen,Chen Zhitao,Li Ding,Fang Hao,Pan Yaobo,Yan Jianfeng,Zhu Guangmin,Chen Cheng,Li Shitao,Hao Maosheng,Zhang Guoyi

DOI: https://doi.org/10.1002/pssc.200980991

2009-01-01

Abstract:AbstractIn the PDF file of the paper by Y. B. Tao et al. [Phys. Status Solidi C 6, S317 (2009)], published online 7 May 2009, a wrong image was loaded: in place of Fig. 2, inadvertently Fig. 1 was shown again. This Erratum displays Figs. 1 and 2 properly. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Improvement of thick InGaN template by thin InGaN buffer grown at low temperature

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Influence of growth process of GaN HT buffer layer on InGaN/GaN MQWs

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐free AlGaN/GaN Heterostructures

Influence of low-V/III intermediate layer on GaN grown on patterned sapphire substrate by MOVPE

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Effect of different buffer layers on the quality of InGaN layers grown on Si

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Influence of MO-GaN templates on the HVPE growth of semi-polar GaN thick films

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Improvement of Crystal Quality of GaN Grown on AlN Template by MOCVD Using HT‐AlN Interlayer [phys. Status Solidi C 6, No. S2, S317–S320 (2009)]