Blocking of interfacial diffusion at Ag/Alq3 by LiF

X WANG,Z XIE,X WANG,Y ZHOU,W ZHANG,X DING,X HOU
DOI: https://doi.org/10.1016/j.apsusc.2006.08.023
IF: 6.7
2007-01-01
Applied Surface Science
Abstract:X-ray photoelectron spectroscopy has been applied to interface studies of Ag/tris-(8-hydroxyquinoline) aluminum (Alq3) and Ag/LiF/Alq3. For Ag/Alq3, diffusion of Ag atoms into the Alq3 layer occurs immediately after the adhesion of the metal onto the organic layer and the process lasts several hours. Insertion of a monolayer-thick LiF buffer at the interface can effectively block the diffusion process. This is quite different from what is observed from Al/LiF/Alq3, where Al penetrates into the LiF layer as deep as several nanometers. It is thus concluded that the LiF buffer may play different roles in Ag/LiF/Alq3 and Al/LiF/Alq3 and hence different mechanisms may dominate in the two cases for the enhanced carrier injection observed.
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