Effect of Doping of Li-Complex on Charge Injection and Transport in Tris(8-Quinolato) Aluminum Layer

T Tsutsui,T Yasuda,H Ikeda,DC Zou
DOI: https://doi.org/10.1117/12.416889
2001-01-01
Abstract:Thin buffer layers composed of tris(8-quinolato) aluminum (Alq) layer doped with Li-acetylacetonate (Li-acac), Mg-acac and magnesium metal were inserted between an MgAg cathode and an Alq electron transport layer in standard double-layer devices with the ITO/TPD/Alq/MgAg structure. The insertion of the buffer layers with Li-acac brought about large decrease in drive voltage. While the effects of Mg-acac and magnesium metal were smaller than the case of Li-acac. Electron drift mobility of Alq layers doped with Li-acac and magnesium metal was evaluated by using a time-of-flight method. Large increases of electron mobility as well as the increase of dark conductivity with doping were found.
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