Interfacial Reactions At Al/Lif And Lif/Al

Zuoti Xie,WenHua Zhang,Baofu Ding,XinDong Gao,Yintao You,Zhengyi Sun,Xunmin Ding,Xiaoyuan Hou
DOI: https://doi.org/10.1063/1.3077167
IF: 4
2009-01-01
Applied Physics Letters
Abstract:High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.
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