Preparation of La2O3 Films by Ion Beam Assistant E-Beam Evaporation

Yang Chen,Fan Huiqing,Jiao Gangcheng,Hui Yingxue
DOI: https://doi.org/10.3321/j.issn:1002-185x.2007.z1.262
2007-01-01
Rare Metal Materials and Engineering
Abstract:La2O3 films were prepared on Si (100) substrates by ion beam assistant thermal oxidative electron beam evaporation. High purity La2O3 (99.99%) was used as raw materials. La2O3 film had been deposited at 200 degrees C. La2O3 films were then annealed at 750 degrees C and 900 degrees C for 1h. The microstructure, optical property and electrical property of La2O3 films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometer and I-V testing. La2O3 films are well crystallized in hexagonal structure. The transmittance of La2O3/Si multi-structure is increased by 20% at wavelength of 2000nm; on the other hand, these La2O3 films exhibits excellent I-V characteristic.
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