Abstract:InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2×1010cm-2 and 6.3×1010cm-2 are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9×1018cm-3 and 1.2×1018cm-3 are obtained by room temperature Hall effect measurement. VN is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05meV and 5.58meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

Investigation on the Structural Origin of N-Type Conductivity in Inn Films

Origin of the N-Type Conductivity of InN: the Role of Positively Charged Dislocations

Correlation Between Switching to N-Type Conductivity and Structural Defects in Highly Mg-doped InN

P-Type Conduction in Zn-Ion Implanted Inn Films

Detecting P-Type Conduction in Ba-Doped Inn

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Superconductivity of InN As an Intrinsic Property

Study of Structure and Temperature-Dependent Conductivity in N-Type Nc-Si:H Thin Films

Thickness Dependent Dislocation, Electrical and Optical Properties in Inn Films Grown by Mocvd

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Origin of N-Type Conductivity in Two-Dimensional InSe: in Atoms from Surface Adsorption and Van Der Waals Gap

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Identification of the Main Contributions to the Conductivity of Epitaxial InN

Electron Concentration Dependence of Exciton Localization and Freeze-out at Local Potential Fluctuations in InN Films

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

Threading Dislocations in In-polar InN Films and Their Effects on Surface Morphology and Electrical Properties

P-Type Behavior in In–N Codoped ZnO Thin Films

Study on the Photoluminescence Properties of Inn Films

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities