Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Fabrication and Mechanism of Relaxed Sige-On-Insulator by Modified Ge Condensation

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

A New Method of Fabricating Strained Silicon Materials

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Stress Relaxation in SGOI Structure Obtained by Condensation

High Performance SiGe Body-On-Insulator (BOI) FinFET Fabricated on Bulk Si Substrate Using Ge Condensation Technique

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Stress-dependent Transformation of Interstitial Oxygen in Processed Ge-doped Cz-Si

The Study on Defects of Germanium-on-Insulator Fabricated by a Low Temperature Smart-Cut Process

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy