Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Effects of Cp 2 Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Study of the heavily p-type doping of cubic GaN with Mg

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Properties of Mg-Doped AlGaN Films

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Doping Characteristics of Mg in InGaAlP and GaP

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Design and Growth of P-Type AlGaN Graded Composition Superlattice

Effects of V/III ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures