Improvement of ICP etching process for reducing the surface roughness of SiO2 optical waveguides

SUN Miao,SHI Yao-cheng,DAI Dao-xin,LIU Liu
DOI: https://doi.org/10.3969/j.issn.1005-5630.2007.01.015
2007-01-01
Abstract:Scattering loss caused by surface roughness of waveguides is the main source of waveguide propagation loss.We can obtain a low loss optical waveguide by reducing the waveguide surface roughness.In this paper,all the parameters of the process of ICP etching,such as the temperature,the pressure in the chamber,the flow rate of reactive gases,the reactive/bias power are optimized to obtain SiO2 optical waveguides with a small surface roughness.An atom force microscope with a high accuracy is used for the measurement of the surface roughness.A very small surface roughness of 3.6nm is achieved under the optimal etching condition.The propagation loss of the fabricated SiO2 waveguide is about 0.1dB/cm.
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