Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Flatness Maintenance and Roughness Reduction of Silicon Mirror in Chemical Mechanical Polishing Process

Surface Flatness and Roughness Synchronized Control in CMP Process of Silicon Mirror

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Surface figure control in fine rotation grinding process of thick silicon mirror

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Material removal mechanism of single crystal silicon by bonnet polishing

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Research on ultra-smooth machining technique for monocrystalline silicon substrate

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Process Chain for Ultra-Precision and High-Efficiency Manufacturing of Large-Aperture Silicon Carbide Aspheric Mirrors

Improving monocrystalline silicon surface quality with chemical mechanical polishing using the slurry with the additive of isopropanol

High precision polishing of aluminum alloy mirrors through a combination of magnetorheological finishing and chemical mechanical polishing

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Review on modeling and application of chemical mechanical polishing

Research on the removal characteristics of surface error with different spatial frequency based on shear thickening polishing method

Research on the key technology for processing efficiency improvement of aluminum alloy mirror chemical mechanical polishing

Improving Polishing Efficiency of RB-SiC through Femtosecond Laser Pretreatment

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

Sub-Nanometer Accuracy Combination Processing Technology for Nickel–Phosphorus Modified Surfaces Based on Aluminum Reflector Mirror

Experimental Study on Roughness and Flatness of Micromirror Fabricated by Different Anisotropic Silicon Etching Processes

Achievement of a near-perfect smooth silicon surface