Abstract:In this study, shear rheological polishing was used to polish the Si surface of six-inch 4H-SiC wafers to improve polishing efficiency. The surface roughness of the Si surface was the main evaluation index, and the material removal rate was the secondary evaluation index. An experiment was designed using the Taguchi method to analyze the effects of four critical parameters (abrasive particle size, abrasive particle concentration, polishing speed, and polishing pressure) on the Si surface polishing of SiC wafers. By evaluating the experimental results for the signal-to-noise ratio, the weight of each factor was calculated using the analysis of variance method. The optimal combination of the process parameters was obtained. Below are the weightings for the influence of each process on the polishing result. A higher value for the percentage means that the process has a greater influence on the polishing result. The wear particle size (85.98%) had the most significant influence on the surface roughness, followed by the polishing pressure (9.45%) and abrasive concentration (3.25%). The polishing speed had the least significant effect on the surface roughness (1.32%). Polishing was conducted under optimized process conditions of a 1.5 μm abrasive particle size, 3% abrasive particle concentration, 80 r/min polishing speed, and 20 kg polishing pressure. After polishing for 60 min, the surface roughness, Ra, decreased from 114.8 to 0.9 nm, with a change rate of 99.2%. After further polishing for 60 min, an ultrasmooth surface with an Ra of 0.5 nm and MRR of 20.83 nm/min was obtained. Machining the Si surface of 4H-SiC wafers under optimal polishing conditions can effectively remove scratches on the Si surface of 4H-SiC wafers and improve the surface quality.

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Achievement of a near-perfect smooth silicon surface

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Grinding and Lapping Induced Surface Integrity of Silicon Wafers and its Effect on Chemical Mechanical Polishing

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Wear phenomena in chemical mechanical polishing

Chemical mechanical polishing: Theory and experiment

Chemical Mechanical Polishing of 4H-SiC Wafer with UV-LED Light

Experimental Study on Shear Rheological Polishing of Si Surface of 4H-SiC Wafer

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

Influence of Colloidal Silica Dispersion on the Decrease of Roughness in Silicon Chemical Mechanical Polishing

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Mechanism and Applications of Chemical and Mechanical Polishing