Growth of Silica Films on Polythylene Terephthalate Substrates by RF Magnetron Sputtering

Zhuang Liu,Jing Lin,Zhihui Sun,De Gao
DOI: https://doi.org/10.3969/j.issn.1672-7126.2009.z1.22
2009-01-01
Abstract:The silicon dioxide films were grown by RF magnetron sputtering on polythylene terephthalate(PET) substrates on industrial scale.The microstiuctures,compositions and barrier properties of the SiO_2 films were characterized with Fourier transform infrared spectroscopy(FTIR),scanning electron microscopy(SEM) atomic force microscopy(AFM) and oxygen transmission rate(OTR) measurement.The impacts of film growth conditions,including the RF power,argon pressure,and substrate moving speed on film barrier properties were studied.The results show that small RF power increases the stress of the PET substrates,and that a judicious choice of film growth conditions results in good gas barrier properties.For example,the film grown at a RF power of 2000W,a pressure of 0.7Pa,and a speed of 1m·min~(-1) reduces the water vapor and oxygen transmission rates by 15 times and 25 times,respectively.
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