Studies on SiC film deposited by pulsed XeCl excimer laser sputtering method

Yuxia Wang,Yeqing Tang,Wei Chen,Weili Cai,Honggao Tang

DOI: https://doi.org/10.1016/S0921-4526(96)00499-1

1996-01-01

Abstract:Thin films of SIC were grown by pulsed excimer laser deposition (PLD). The quality and structure of the films were examined by AES, XPS, TEM, SEM, XRD and IR. The deposited films were dense and uniform and stuck tightly to the substrates. The compositions of the films were quite uniform and the ratio of silicon to carbon atomic in the films was nearly 1:1, with slight excess carbon. The films contained less than 10% oxide contamination. The basic stage of the chemical valence in the films was the Si-C covalent bond. The valence electrons density in the films was 94.4% of that in single crystal SIG. The structure of the films was the polycrystalline nH-SiC (n = 4, 6 or both) hexagonal system.