Through-Silicon-Via Insertion for Performance Optimization in Three-Dimensional Integrated Circuits

Libo Qian,Zhangming Zhu,Yintang Yang

DOI: https://doi.org/10.1016/j.mejo.2011.11.004

IF: 1.992

2012-01-01

Microelectronics Journal

Abstract:Through-silicon-via (TSV) interconnect is one of the main technologies for three-dimensional integrated circuits production (3-D ICs). Based on a parasitic parameters extraction model, first order expressions for the TSV resistances, inductances, and capacitance as functions of physical dimension and material characteristic are derived. Analyzing the impact of TSV size and placement on the interconnect timing performance and signal integrity, this paper presents an approach for TSV insertion in 3D ICs to minimize the propagation delay with consideration to signal reflection. Simulation results in multiple heterogeneous 3D architectures demonstrate that our approach in generally can result in a 49.96% improvement in average delay, a 62.28% decrease in the reflection coefficient, and the optimization for delay can be more effective for higher non-uniform inter-plane interconnects. The proposed approach can be integrated into the TSV-aware design and optimization tools for 3-D circuits to enhance system performance.