Abstract:Oxygen is the major impurity in single-crystal silicon rod derived from the growth of large-diameter n-type Czochralski (Cz) silicon, which could exert severe affects on the cell efficiency of monocrystalline silicon wafer. Reducing the concentration of oxygen in the silicon crystal could significantly improve the wafer cell efficiency. In the current work, a 2D global quasi-steady-state axisymmetric model was established based on the n-type 252 mm diameter single-crystal silicon growth process. Moreover, the effect of different heater structures on the concentration of oxygen in the hot zone, the crystal and the melt of the Cz furnace was investigated by the finite element method (FVM). It was found that the heater power was decreased by 2.22 kW after increasing the heater height from 210 mm to 300 mm. However, the average temperature of the quartz crucible was increased by 4.72 K, which contributes to the increase in the concentration of oxygen in the center of the wafer at the head of the single crystal silicon rod by 0.39 ppma. This demonstrates that increasing the heater height facilitates the reduction of the heater power consumption, but increases the oxygen concentration in the center of the wafer at the head of the monocrystalline silicon rods. The method of reducing the radiating area of the heater by increasing the slot depth was employed to reduce the heater power by 1.07 kW when adopting a heater structure with a height of 260 mm, an upper slot depth of 200 mm, and a bottom slot depth of 200 mm. The oxygen concentration of silicon wafers, which was detected by Fourier transform infrared spectroscopy, demonstrates that the oxygen concentration in the center of the head wafer was reduced by 1.324 ppma, and the average oxygen concentration of the head wafers reduced by 0.66 ppma. This study provides a theoretical basis for the design of oxygen-reducing heaters, which could be applied for the production of M10-size monocrystalline silicon wafers.

Study on Oxygen Control of Large Diameter N-type Monocrystalline Silicon with Large Thermal Field

Effect of Heater Structure on Oxygen Concentration in Large Diameter N-Type Czochralski Silicon Study Using Numerical Simulation

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Oxygen and Carbon Behaviors in Multi-Crystalline Silicon and Their Effect on Solar Cell Conversion Efficiency

Oxygen Annealing Behavior in Multicrystalline Silicon

Study on the Effect of Melt Flow Behavior on the Uniformity of Phosphorus Doping During the Growth of Large-Size N-Type Monocrystalline Silicon by Czochralski Method

The Advance of Research on Oxygen Precipitates in NCZ Silicon

A novel approach to reduce the oxygen content in Monocrystalline silicon by Czochralski method

(Invited) Defects in Cast-Mono Crystalline Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Crystal Growth and Oxygen Precipitation Behavior of 300 Mm Nitrogen-Doped Czochralski Silicon

Effects of Melt Depth on Oxygen Transport in Silicon Crystal Growth by Continuous-Feeding Czochralski Method

Industrial‐Scale Preparation of Nanocrystalline n‐Type Silicon Oxide Front Contacts Using N2O as an Oxygen Source for High‐Efficiency Silicon Heterojunction Solar Cells

Control of oxygen transport in the melt of a czochralski-silicon crystal growth

Turbulent transport of oxygen in the Czochralski growth of large silicon crystals