Abstract:For manufacturing of several high performance electronic devices, e.g. insulated-gate bipolar transistors (IGBT), single crystalline silicon crystals with high purity and minimum oxygen (in the range of 1015 at/cm3) concentration are required. Such silicon crystals are typically grown by the Floating Zone technique (Fz), as the more common and cheaper Czochralski technique (Cz) uses silica crucible, which leads always to a relatively high oxygen concentration in the silicon crystals (>1017 at/cm−3). Therefore, in this work potential materials were evaluated with respect to the development of a novel oxygen-free crucible system, which should enable a cost effective growth of oxygen free Cz silicon ingots. For that purpose different graphite materials as well as nitride bonded silicon nitride (NSN) were tested in contact with liquid silicon due to their infiltration behaviour and occurrence of crack formation. Functional silicon nitride (Si3N4) coatings were applied by powder based spray coating of reaction bonded silicon nitride (RBSN) and chemical vapour deposition (CVD) on graphite and NSN crucibles. Characterization of the crucible/coating systems before and after crystal growth experiments in a lab-scale casting furnace reveal information about morphology, infiltration behaviour and adhesion strength on the crucible. Further, investigations on the grown silicon crystals give information about impurity incorporation coming from the novel crucible systems. The results indicated, that especially graphite materials with low porosity and a high mechanical strength as well as NSN with polysilazane sealing in combination with a CVD Si3N4 coating have definitely a potential for application as crucible system in silicon growth processes.

A novel approach to reduce the oxygen content in Monocrystalline silicon by Czochralski method

Oxygen Annealing Behavior in Multicrystalline Silicon

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process

Study on Oxygen Control of Large Diameter N-type Monocrystalline Silicon with Large Thermal Field

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Effect of carbon on oxygen precipitation in Czochralski silicon for solar cells

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Oxygen in Czochralski Silicon Used for Solar Cells

Electron‐Selective Strontium Oxide Contact for Crystalline Silicon Solar Cells with High Fill Factor

Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals

Effect of Oxygen Precipitation on the Performance of Czochralski Silicon Solar Cells

Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots