Abstract:Mg3Sb2-based materials, part of the Zintl compound family, are known for their low thermal conductivity but face challenges in thermoelectric applications due to their low energy conversion efficiency. This study addressed these limitations through first-principles calculations using the CASTEP module in Materials Studio 8.0, aiming to enhance the thermoelectric performance of Mg3Sb2 via strategic doping. Density functional theory (DFT) calculations were performed to analyze electronic properties, including band structure and density of states (D.O.S.), providing insights into the influence of various dopants. The semiclassical Boltzmann transport theory, implemented in BoltzTrap (version 1.2.5), was used to evaluate key thermoelectric properties such as the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and electronic figure of merit (eZT). The results indicate that doping significantly improved the thermoelectric properties of Mg3Sb2, facilitating a transition from p-type to n-type behavior. Bi doping reduced the band gap from 0.401 eV to 0.144 eV, increasing carrier concentration and mobility, resulting in an electrical conductivity of 1.66 × 106 S/m and an eZT of 0.757. Ge doping increased the Seebeck coefficient to −392.1 μV/K at 300 K and reduced the band gap to 0.09 eV, achieving an electronic ZT of 0.859 with low thermal conductivity (11 W/mK). Si doping enhanced stability and achieved an electrical conductivity of 1.627 × 106 S/m with an electronic thermal conductivity of 11.3 W/mK, improving thermoelectric performance. These findings established the potential of doped Mg3Sb2 as a highly efficient thermoelectric material, paving the way for future research and applications in sustainable energy solutions.

Predicting the optimized thermoelectric performance of MgAgSb

Enhancing Thermoelectric Performance of Mg3Sb2 Through Substitutional Doping: Sustainable Energy Solutions via First-Principles Calculations

Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Improving Thermoelectric Performance Of Alpha-Mgagsb By Theoretical Band Engineering Design

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Improving Thermoelectric Performance of AgSbTe2 through Suppression of Ag2Te and Band Convergence via Mg and Ti Codoping

Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Ag-Mg antisite defect induced high thermoelectric performance of α-MgAgSb

High Performance Α-Mgagsb Thermoelectric Materials for Low Temperature Power Generation

High thermoelectric performance of MgAgSb-based materials

Thermoelectric performance enhancement of Pb-doped α -MgAgSb near room temperature

Hole Doped Α-Mgagsb As Potential Low Temperature Thermoelectric Materials

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Enhancing the Thermoelectric Performance of Mgagsb-Based Materials with Heavy Zn-Doped

Effect of Cu Concentration on Thermoelectric Properties of Nanostructured P-Type MgAg0.97−xCuxSb0.99

Lithium Doping to Enhance Thermoelectric Performance of MgAgSb with Weak Electron–Phonon Coupling

Enhanced Thermoelectric Performance of Mg-Doped AgSbTe 2 by Inhibiting the Formation of Ag 2 Te

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance P-Type Mg3Sb2 Zintl Compounds

First-principles Calculations to Investigate Probing the Influence of Mn and Mg Doping Concentration on Electronic Structures and Transport Properties of SnTe Alloys