Abstract:Engineering atomic-scale native point defects has become an attractive strategy to improve the performance of thermoelectric materials. Here, we theoretically predict that Ag-Mg antisite defects as shallow acceptors can be more stable than other intrinsic defects under Mg-poor‒Ag/Sb-rich conditions. Under more Mg-rich conditions, Ag vacancy dominates the intrinsic defects. The p-type conduction behavior of experimentally synthesized α-MgAgSb mainly comes from Ag vacancies and Ag antisites (Ag on Mg sites), which act as shallow acceptors. Ag-Mg antisite defects significantly increase the thermoelectric performance of α-MgAgSb by increasing the number of band valleys near the Fermi level. For Li-doped α-MgAgSb, under more Mg-rich conditions, Li will substitute on Ag sites rather than on Mg sites and may achieve high thermoelectric performance. A secondary valence band is revealed in α-MgAgSb with 14 conducting carrier pockets.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the thermoelectric performance of α - MgAgSb materials by engineering and designing the inherent point defects at the atomic scale. Specifically, the researchers focused on the stability of Ag - Mg anti - site defects (Ag atoms occupying Mg positions) as shallow acceptors under Mg - poor - Ag/Sb - rich conditions, and how these defects significantly increase the thermoelectric performance of α - MgAgSb. In addition, the paper also explored the influence of Li doping on α - MgAgSb, especially that under more Mg - rich conditions, Li is more likely to replace Ag sites rather than Mg sites and may achieve higher thermoelectric performance. By combining theoretical prediction and experimental verification, the paper analyzed in detail the types of inherent defects formed under different conditions and their influence on the electronic structure, especially how these defects affect the number of band valleys and the degree of band degeneracy, and then affect the Seebeck coefficient and electrical conductivity, and finally improve the ZT value of the material. By reasonably controlling the chemical potential, α - MgAgSb materials with high thermoelectric performance can be obtained, which provides a potential material choice for low - temperature power generation applications.

Ag-Mg antisite defect induced high thermoelectric performance of α-MgAgSb