Hole Doped Α-Mgagsb As Potential Low Temperature Thermoelectric Materials

Gang Zhou,Ji-wen Xu,Guang-hui Rao
DOI: https://doi.org/10.1016/j.physleta.2019.07.021
IF: 2.707
2019-01-01
Physics Letters A
Abstract:The electronic structures and thermoelectric transport properties of α-MgAgSb were systematically investigated by using the first principles calculations combined with the Boltzmann transport equations. It is found that the thermoelectric properties of p-type α-MgAgSb are much better than those of n-type one, which originates from the steeper slope of the density of states at the edge of the valence band. By analyzing the density of states and partial charge density, we conclude that p-doping at the Mg-site does not modify the electronic states, but can optimize the carrier concentration. The effects of the carrier concentration and temperature on the thermoelectric transport properties of p-type α-MgAgSb are discussed in detail and the calculated results show good agreement with the experimental values. The p-type α-MgAgSb exhibit high thermoelectric performance and is a promising candidate for the low-temperature thermoelectric applications
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