Unusual consequences of donor and acceptor doping on the thermoelectric properties of the MgAg<sub>0.97</sub>Sb<sub>0.99</sub> alloy

Y. Liu,D. Z. Zhou,Y. Q. Li,A. J. Hong,J. H. Sui,J. M. Liu,Z. F. Ren

DOI: https://doi.org/10.1039/c7ta08657a

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:MgAgSb alloys have been demonstrated to be one of the two best classes of low-temperature thermoelectric materials.

What problem does this paper attempt to address?

Unusual Consequences of Donor and Acceptor Doping on the Thermoelectric Properties of the MgAg0.97Sb0.99 Alloy

Y. Liu,D. Z. Zhou,Y. Q. Li,A. J. Hong,J. H. Sui,J. M. Liu,Z. F. Ren

DOI: https://doi.org/10.1039/c7ta08657a

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:MgAgSb alloys have been demonstrated to be one of the two best classes of low-temperature thermoelectric materials. In this study, a series of dopants to the slightly Ag- and Sb-deficient MgAg0.97Sb0.99 alloy are studied to explore their consequences on the power factor (PF) and thermoelectric figure-of-merit (ZT) of the alloy. The systematic study reveals that starting from the MgAg0.97Sb0.99 alloy, the donor dopant degrades both the PF and ZT, whereas the acceptor dopant enhances the PF without affecting the ZT. Both the donor and acceptor make the total thermal conductivity higher. A full-scale thermoelectric computation based on first-principles calculations and the Boltzmann transport theory is carried out to validate the experimental results. The calculated results for the donors and acceptors are semi-quantitatively consistent with our experimental results. The present study suggests that carrier doping alone may not be sufficient to significantly improve the overall thermoelectric performance of the MgAg0.97Sb0.99 alloy.
Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Ting Zhang,Baokun Dong,Xuan Wang

DOI: https://doi.org/10.1007/s10853-021-06171-y

IF: 4.5

2021-05-19

Journal of Materials Science

Abstract:Recently, α-MgAgSb-based materials have proved to be a kind of potential thermoelectric materials around room temperature. Here, a series of Zn-doped α-MgAgSb have been successfully synthesized by high-temperature milting and spark plasma sintering combined with annealing. Effect of Zn-doping on the microstructure and thermoelectric performance of α-MgAgSb has been investigated. Results show that Zn-doping can enhance the crystallization and carrier concentration, resulting in an increased electrical performance. Simultaneously, multiscales of nanodots, defects, grain boundaries and impurities have been introduced to reduce the lattice thermal performance. Finally, both the optimized electrical and thermal properties significantly promote the thermoelectric performance. A peak ZT of 1.29 has achieved for Mg0.985Zn0.015Ag0.97Sb0.99 at 550 K, about 18% higher than MgAg0.97Sb0.99, which indicates that Zn-doping into Mg-site is beneficial to optimize the performance of α-MgAgSb-based thermoelectric materials.

materials science, multidisciplinary
Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Lihong. Huang,Tong Liu,Xiaobo Mo,Guocai Yuan,Runyu Wang,Hang Liu,Xiaobo Lei,Qinyong Zhang,Zhifeng Ren,Lihong Huang

DOI: https://doi.org/10.1016/j.mtphys.2021.100564

IF: 11.021

2021-11-01

Materials Today Physics

Abstract:Mg3Sb2-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements. However, pure and intrinsic p-type Mg3Sb2 manifests a poor thermoelectric performance because of its high electrical resistivity. It is reported that Ag doping in Mg sites can increase the mobility and carrier concentration of p-type Mg3Sb2; however, high thermal conductivity still limits the improvement of the ZT value. In the present work, Zn and Ag co-doping in Mg sites was carried out to optimize the thermoelectric performance of p-type Mg3Sb2. Experimental results revealed that the carrier concentration and mobility of Mg3Ag0.01Sb2 significantly increased after Zn doping, leading to an improvement of the power factor. Simultaneously, lattice thermal conductivity was significantly reduced due to the large mass difference between Zn and Mg. The Mg2.39Zn0.6Ag0.01Sb2 sample with an optimal doping concentration of 3.95 × 1019 cm−3 achieved a maximum ZT value of 0.84 at 773 K. Hence, Zn and Ag co-doping is an effective method to improve the thermoelectric performance of p-type Mg3Sb2.

materials science, multidisciplinary,physics, applied
Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Shijuan Xiao,Kunling Peng,Zizhen Zhou,Huan Wang,Sikang Zheng,Xu Lu,Guang Han,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.jma.2021.09.012

IF: 11.813

2021-10-01

Journal of Magnesium and Alloys

Abstract:Mg3Sb2 has attracted intensive attention as a typical Zintl-type thermoelectric material. Despite the exceptional thermoelectric performance in n-type Mg3Sb2, the dimensionless figure of merit (zT) of p-type Mg3Sb2 remains lower than 1, which is mainly attributed to its inferior electrical properties. Herein, we synergistically optimize the thermoelectric properties of p-type Mg3Sb2 materials via codoping of Cd and Ag, which were synthesized by high-energy ball milling combined with hot pressing. It is found that Cd doping not only increases the carrier mobility of p-type Mg3Sb2, but also diminishes its thermal conductivity (κ tot), with Mg2.85Cd0.5Sb2 achieving a low κ tot value of ∼0.67 W m−1 K−1 at room temperature. Further Ag doping elevates the carrier concentration, so that the power factor is optimized over the entire temperature range. Eventually, a peak zT of ∼0.75 at 773 K and an excellent average zT of ∼0.41 over 300 − 773 K are obtained in Mg2.82Ag0.03Cd0.5Sb2, which are ∼240% and ∼490% higher than those of pristine Mg3.4Sb2, respectively. This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg3Sb2 by codoping Cd and Ag, which is beneficial to the future applications of Mg3Sb2-based thermoelectric materials.

metallurgy & metallurgical engineering
Hole Doped Α-Mgagsb As Potential Low Temperature Thermoelectric Materials

Gang Zhou,Ji-wen Xu,Guang-hui Rao

DOI: https://doi.org/10.1016/j.physleta.2019.07.021

IF: 2.707

2019-01-01

Physics Letters A

Abstract:The electronic structures and thermoelectric transport properties of α-MgAgSb were systematically investigated by using the first principles calculations combined with the Boltzmann transport equations. It is found that the thermoelectric properties of p-type α-MgAgSb are much better than those of n-type one, which originates from the steeper slope of the density of states at the edge of the valence band. By analyzing the density of states and partial charge density, we conclude that p-doping at the Mg-site does not modify the electronic states, but can optimize the carrier concentration. The effects of the carrier concentration and temperature on the thermoelectric transport properties of p-type α-MgAgSb are discussed in detail and the calculated results show good agreement with the experimental values. The p-type α-MgAgSb exhibit high thermoelectric performance and is a promising candidate for the low-temperature thermoelectric applications
Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Xin Li,Bin Yang,Hui Xie,Hong Zhong,Songke Feng,Yalong Zhang,Ying Ma,Juntao Zhang,Hengjie Su

DOI: https://doi.org/10.1016/j.materresbull.2022.112106

IF: 5.6

2023-03-01

Materials Research Bulletin

Abstract:The defect formation energy and the electronic structures of Ag-doped Mg3- x - y Ag y Sb2 alloys were accurately determined by carrying out first-principles calculations. The relevant crystals were prepared by using the directional solidification method and their thermoelectric properties were thoroughly investigated. From the calculated outcomes, it was demonstrated that Mg1 sites tend to form a vacancy, while Mg2 sites are preferentially substituted by the Ag atoms. The top values of the electrical conductivity and the power factor of the Mg2.95Ag0.025Sb2 alloy were improved by 25% and 10%, respectively. The increased point defect content is beneficial for enhancing the phonon scattering. In addition, the maximum ZT value of the Mg2.95Ag0.025Sb2 alloy was 1.1 – 1.45 times higher than that of the previously reported Ag-doped crystals. In the medium temperature range, the ZT values remained above 0.5, which is also considered a significant improvement compared with other types of p-type Mg3Sb2 alloys reported in the literature.

materials science, multidisciplinary
Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Jiankang Li,Raju Chetty,Zihang Liu,Weihong Gao,Takao Mori

DOI: https://doi.org/10.1002/smll.202408059

IF: 13.3

2024-11-18

Small

Abstract:N‐type Mg3Sb2‐based material is recognized as a promising thermoelectric material. Ag is revealed as an effective dopant for the Mg3.2Sb1.5Bi0.49Te0.01 system with a different effect from Cu. A peak ZT of 1.64 at 673 K is achieved. Moreover, a 2‐pair module fabricated with MgAgSb as p‐type material, results in a high ηmax of ≈7.9% at relatively low ΔT of 277 K. The n‐type Mg3(Sb, Bi)2 compounds show great potential for wasted heat energy harvesting due to their promising thermoelectric properties. This work discovers that doping transition element Ag into the n‐type Mg3(Sb, Bi)2 can effectively optimize the power factor and suppress the lattice thermal conductivity simultaneously. Interestingly, the Ag doping has different effects compared to the isoelectronic and same group element Cu addition studied previously. A high power factor of 19.6 μW cm−1 K−2 is obtained at 673 K owing to the increased electrical conductivity. At the same time, the lattice thermal conductivity is reduced to ≈0.5 W m−1 K−1 because of enhanced phonon scattering induced by Ag atoms. These improvements lead to a peak figure of merit (ZT) of 1.64 at 673 K as well as a high average ZT of 1.27 is obtained from 323 K to 673 K. Furthermore, a thermoelectric single leg with a competitive conversion efficiency of ≈11% under a hot‐side temperature of 673 K is fabricated successfully. In addition, a 2‐pair module composed of n‐type Mg3(Sb, Bi)2 alloy and p‐type MgAgSb‐based compound demonstrates the high conversion efficiency of ≈7.9% at a temperature difference of 277 K, which will significantly upgrade the sustainable energy recycling technology.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Zhe Xu,Xiao-Lei Shi,Yibo Zhang,Jisheng Liang,Meng Li,Chengyan Liu,Lei Miao,Siqi Liu,Shihao Wang,Qi Zhou,Jie Gao,Zhongwei Zhang,Wei-Di Liu,Ying Peng,Jun-Liang Chen,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.cej.2024.155147

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Owing to the non-toxicity and low cost, Mg3Sb2-based Zintls are promising candidates for mid-temperature thermoelectric applications. However, the thermoelectric performance of p-type Mg3Sb2 is significantly lower than that of n-type ones. Here, we achieve simultaneous optimization of the band structure and enhanced phonon scattering through the combined doping of Na at the cation site and Bi at the anion site, leading to a competitive figure of merit, ZT of 0.73 at 773 K and a maximum theoretical energy conversion efficiency of 6.5 % at a temperature difference of 450 K. First-principles calculations indicate that Na and Bi co-doping effectively narrows the band gap and shifts the Fermi level into the valence band, thereby increasing the hole carrier concentration. This ensures a relatively high Seebeck coefficient and improved electrical conductivity, resulting in an excellent power factor of 7.5 mu W cm(-1) K-2. Additionally, by adjusting the amount of Bi nanoprecipitates in the matrix, the heterogeneous interfaces significantly enhance phonon scattering and markedly reduce the lattice thermal conductivity (0.52 W m(-1) K-1), collectively leading to the high thermoelectric performance. Furthermore, by pairing n-type Mg3.18Y0.02Sb1.5Bi0.49Se0.01, a double-leg thermoelectric device achieves an energy conversion efficiency of 4.1 % with a temperature difference of 390 K.
Ag-Mg antisite defect induced high thermoelectric performance of α-MgAgSb

Zhenzhen Feng,Jihua Zhang,Yuli Yan,Guangbiao Zhang,Chao Wang,Chengxiao Peng,Fengzhu Ren,Yuanxu Wang,Zhenxiang Cheng

DOI: https://doi.org/10.1038/s41598-017-02808-8

IF: 4.6

2017-05-31

Scientific Reports

Abstract:Engineering atomic-scale native point defects has become an attractive strategy to improve the performance of thermoelectric materials. Here, we theoretically predict that Ag-Mg antisite defects as shallow acceptors can be more stable than other intrinsic defects under Mg-poor‒Ag/Sb-rich conditions. Under more Mg-rich conditions, Ag vacancy dominates the intrinsic defects. The p-type conduction behavior of experimentally synthesized α-MgAgSb mainly comes from Ag vacancies and Ag antisites (Ag on Mg sites), which act as shallow acceptors. Ag-Mg antisite defects significantly increase the thermoelectric performance of α-MgAgSb by increasing the number of band valleys near the Fermi level. For Li-doped α-MgAgSb, under more Mg-rich conditions, Li will substitute on Ag sites rather than on Mg sites and may achieve high thermoelectric performance. A secondary valence band is revealed in α-MgAgSb with 14 conducting carrier pockets.

multidisciplinary sciences
Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

Xinxin Yang,Heng Ni,Xiaotong Yu,Biao Cao,Juanjuan Xing,Qiyong Chen,Lili Xi,Jiandang Liu,Jiye Zhang,Kai Guo,Jing-Tai Zhao

DOI: https://doi.org/10.1016/j.jmat.2023.05.004

IF: 8.589

2023-06-01

Journal of Materiomics

Abstract:Large Seebeck coefficients induced by high degeneracy of conduction band minimum, and low intrinsic lattice thermal conductivity originated from large lattice vibrational anharmonicity render Mg3Sb2 as a promising n-type thermoelectric material. Herein, we demonstrated unique concentration-dependent occupation behaviors of Cu in Mg3.4Sb1.5Bi0.49Te0.01 matrix, evidenced by structural characterization and transport property measurements. It is found that Cu atoms prefer to enter the interstitial lattice sites in Mg3Sb2 host with low doping level (Mg3.4Sb1.5Bi0.49Te0.01 + x % Cu, x < 0.3%), acting as donors for providing additional electrons without deteriorating the carrier mobility. When x is larger than 0.3%, the excessive Cu atoms are inclined to substitute Mg atoms, yielding acceptors to decrease the electron concentration. As a result, the electrical conductivity of the Mg3.4Sb1.5Bi0.49Te0.01 + 0.3% Cu sample reaches 2.3 × 104 S/m at 300 K, increasing by 300% compared with that of the pristine sample. The figure of merit zT values in the whole measured temperature range are significantly improved by the synergetic improvement of power factor and reduction of thermal conductivity. An average zT ∼1.07 from 323 K to 773 K has been achieved for the Mg3.4Sb1.5Bi0.49Te0.01 + 0.3% Cu sample, which is about 30% higher than that of the Mg3.4Sb1.5Bi0.49Te0.01 sample.

materials science, multidisciplinary,chemistry, physical,physics, applied
High Performance Α-Mgagsb Thermoelectric Materials for Low Temperature Power Generation

Pingjun Ying,Xiaohua Liu,Chenguang Fu,Xianqiang Yue,Hanhui Xie,Xinbing Zhao,Wenqing Zhang,Tiejun Zhu

DOI: https://doi.org/10.1021/cm5041826

IF: 10.508

2015-01-01

Chemistry of Materials

Abstract:Bi2Te3 based alloys have long been the best and most unique thermoelectric materials for power generation below 550 K. Their substitutes with abundantly available elements are highly desirable due to the scarcity of Te element. In this work the band structure calculation of the α-MgAgSb compound shows a narrow gap characteristic. Highly pure α-MgAgSb is obtained by carefully controlled processing. The samples exhibit an intrinsically low thermal conductivity due to the unique crystal structure. A high zT of ∼1.1 at 525 K is achieved in the In doped α-MgAgSb with the optimal carrier concentration of 8–9 × 1019 cm–3, comparable to that of Bi2Te3 based alloys. Considering the abundantly available constituent elements, the present results demonstrate that α-MgAgSb is a promising candidate for low-temperature (RT–550 K) power generation.
Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Binhao Wang,Haidong Zhao,Jianghua Li,Bin Zhang,Dan Wang,Chen Chen,Aihua Song,Wentao Hu,Dongli Yu,Bo Xu,Yongjun Tian

DOI: https://doi.org/10.1016/j.jmat.2023.06.001

IF: 8.589

2023-06-01

Journal of Materiomics

Abstract:With the advantages of eco-friendliness, low cost, and low density, Mg2(Si,Sn) solid solutions are promising candidates for thermoelectric applications. In this work, Sb-doped Mg2Si0.4Sn0.6 bulks were prepared with a combined method of solid-state reaction and high pressure synthesis, followed by spark plasma sintering. Our investigations show that Sb doping optimizes the carrier concentration, while Si/Sn alloying effectively suppresses the lattice thermal conductivity and induces a convergence of the two lowest-lying conduction bands. Additionally, numerous coherent Sn-rich nanoprecipitates are formed within micron-sized grains. All these factors contribute synergistically to improving the thermoelectric properties of Mg2Si0.4Sn0.6. The optimal Mg2(Si0.4Sn0.6)0.985Sb0.015 exhibits a power factor higher than 4000 μW·m−1·K−2 and a lattice thermal conductivity less than 0.8 W·m−1·K−1 at temperatures higher than 600 K, leading to the highest ZT of 1.61 at 823 K. Current work demonstrates an effective approach to enhancing the thermoelectric performance of n-type Mg2X solid solutions through doping, alloying, and microstructure modification.

materials science, multidisciplinary,chemistry, physical,physics, applied
Realizing high thermoelectric performance in p-type CaZn2Sb2-alloyed Mg3Sb2-based materials via band and point defect engineering

Lian Wu,Zizhen Zhou,Guang Han,Bin Zhang,Jian Yu,Hengyang Wang,Yao Chen,Xu Lu,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.cej.2023.145988

IF: 15.1

2023-11-01

Chemical Engineering Journal

Abstract:Layered Zintl-phase compound Mg3Sb2, possessing the advantages of high abundance, environmental friendliness, and low lattice thermal conductivity, are emerging materials for thermoelectric applications. However, p-type Mg3Sb2-based materials perform unfavorably than their n-type counterparts in terms of thermoelectric performance, which is mainly ascribed to undesirable valence band structure. Herein, we implement the strategy of alloying CaZn2Sb2 to achieve simultaneously improved electrical and thermal performance in p-type Mg3Sb2: (i) alloying CaZn2Sb2 not only optimizes the Seebeck coefficient, but also leads to improved carrier mobility; (ii) the mass and strain field fluctuations caused by alloying CaZn2Sb2 enhance phonon scattering, which significantly reduces the lattice thermal conductivity of the samples. By doping Ag in (Mg3.2Sb2)0.7(CaZn2Sb2)0.3 to realize higher electrical conductivity, the Mg2.22Ag0.02Ca0.3Zn0.6Sb2 sample reaches an excellent peak zT value of 0.90 at 823 K, which compares favorably to those of reported p-type Mg3Sb2-based materials. This study develops an effective pathway to advance thermoelectric performance of p-type Mg3Sb2-based materials.

engineering, chemical, environmental
Improving p-type thermoelectric performance of Mg2(Ge,Sn) compounds via solid solution and Ag doping

Guangyu Jiang,Luxin Chen,Jian He,Hongli Gao,Zhengliang Du,Xinbing Zhao,Terry M. Tritt,Tiejun Zhu

DOI: https://doi.org/10.1016/j.intermet.2012.08.002

IF: 4.075

2013-01-01

Intermetallics

Abstract:Mg2X (X = Si, Ge, and Sn) compounds have attracted increasing attention owing to their promising thermoelectric properties and “green” constituent elements. While most studies to date have been on n-type Mg2(Si,Sn) solid solutions, we herein report Ag-doping study in Mg2(Ge,Sn) solid solutions to pursue higher p-type performance. Two series of samples, Mg2Ge1−xSnx and Mg2−yAgyGe0.4Sn0.6, were prepared by melting in evacuated Ta tubes, followed by hot pressing, and the thermoelectric properties of the solid solutions were investigated from room temperature to 723 K. An n- to p-type crossover in the Seebeck coefficient was observed for Mg2Ge0.4Sn0.6 and Mg2Ge0.2Sn0.8 at elevated temperatures. To enhance p-type performance, we doped Ag in Mg2Ge0.4Sn0.6 that exhibited lowest thermal conductivity among the Mg2(Ge,Sn) solid solutions. It was found that (1) p-type behavior has been established in Mg2−yAgyGe0.4Sn0.6 (y = 0.005, 0.01, 0.02, 0.04) samples in the entire temperature range studied; and (2) the electrical conductivity increased with increasing Ag content until reaching the solution limit ∼0.02. As a result, a dimensionless figure of merit ZT ∼0.38 is attained for Mg1.98Ge0.4Sn0.6Ag0.02 at 675 K, which is one of the highest reported values in p-type Mg2X compounds.
Enhancing Thermoelectric Performance of Mg3Sb2 Through Substitutional Doping: Sustainable Energy Solutions via First-Principles Calculations

Muhammad Owais,Xian Luo,Bin Huang,Yanqing Yang,Mudassar Rehman,Ray Tahir Mushtaq

DOI: https://doi.org/10.3390/en17215358

IF: 3.2

2024-10-29

Energies

Abstract:Mg3Sb2-based materials, part of the Zintl compound family, are known for their low thermal conductivity but face challenges in thermoelectric applications due to their low energy conversion efficiency. This study addressed these limitations through first-principles calculations using the CASTEP module in Materials Studio 8.0, aiming to enhance the thermoelectric performance of Mg3Sb2 via strategic doping. Density functional theory (DFT) calculations were performed to analyze electronic properties, including band structure and density of states (D.O.S.), providing insights into the influence of various dopants. The semiclassical Boltzmann transport theory, implemented in BoltzTrap (version 1.2.5), was used to evaluate key thermoelectric properties such as the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and electronic figure of merit (eZT). The results indicate that doping significantly improved the thermoelectric properties of Mg3Sb2, facilitating a transition from p-type to n-type behavior. Bi doping reduced the band gap from 0.401 eV to 0.144 eV, increasing carrier concentration and mobility, resulting in an electrical conductivity of 1.66 × 106 S/m and an eZT of 0.757. Ge doping increased the Seebeck coefficient to −392.1 μV/K at 300 K and reduced the band gap to 0.09 eV, achieving an electronic ZT of 0.859 with low thermal conductivity (11 W/mK). Si doping enhanced stability and achieved an electrical conductivity of 1.627 × 106 S/m with an electronic thermal conductivity of 11.3 W/mK, improving thermoelectric performance. These findings established the potential of doped Mg3Sb2 as a highly efficient thermoelectric material, paving the way for future research and applications in sustainable energy solutions.

energy & fuels
Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

H. L. Gao,X. X. Liu,T. J. Zhu,S. H. Yang,X. B. Zhao

DOI: https://doi.org/10.1007/s11664-011-1584-2

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:This study focuses on Sb-doped Mg 2 (Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit ( ZT ) of ~0.55 at 620 K, while leaving the band gap of Mg 2 Si 0.7 Sn 0.3 almost unchanged.
Thermoelectric performance enhancement of Pb-doped α -MgAgSb near room temperature

Guijuan Li,Juan Li,Linghao Zhao,Jianghe Feng,Ruiheng Liu

DOI: https://doi.org/10.1063/5.0202713

IF: 4

2024-04-29

Applied Physics Letters

Abstract:α-MgAgSb is taken as the p-type leg material for recently focused Mg-based thermoelectric devices because of the high thermoelectric performance near room temperature. However, the thermoelectric performance of α-MgAgSb is inhibited by the existence of the Ag-rich second phase. The ordinary methods like carrier concentration optimization and minimizing lattice thermal conductivity were nearly invalid because of the extremely low doping level for heteroatoms and intrinsically low lattice thermal conductivity. The crystal structure of α-MgAgSb can be viewed as Ag atom filled in half distorted hexahedron in the distorted rock salt skeleton formed by the Mg–Sb sublattice. In this work, by replacing the smaller Mg in the sublattice with Pb, the volume of the distorted hexahedron is effectively expanded to accommodate Ag atoms and then lead to the re-dissolution of Ag-rich second phase in the matrix. In addition, as Ag is the main source of low-frequency phonons, the enhanced lattice anharmonicity by Pb doping leads to stronger scattering of phonons in the distorted hexahedron and results in 20% reduction of lattice thermal conductivity in the temperature range of 300–500 K. Finally, the figure of merit zT is enhanced by ∼40% in the whole temperature range, demonstrating that lattice management is a promising method for the optimization of α-MgAgSb materials.

physics, applied
Role of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby alloys

Bo Zhu,Xu Lu,Lianglu Hu,Qiang Zhang,Lifei Wang,Yun Zheng,Jianfeng Fan

DOI: https://doi.org/10.1002/cnma.202200419

IF: 3.82

2022-10-19

ChemNanoMat

Abstract:In this work, we focused on the matrix material with a composition of Mg3Sb1.8Bi0.2. The effect of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby (y=0, 0.005, 0.01, 0.02) compounds was investigated. Mechanical alloying followed by spark plasma sintering was employed to synthesize the corresponding bulk materials. The x‐ray diffraction results indicate that the doping limit of Pb in Mg3Sb1.8Bi0.2 is 0.01~0.02. Pb doping significantly increases the carrier concentration up to >1019 cm‐3, while decreasing the Seebeck coefficient. Moreover, the thermal conductivity of the matrix material is reduced upon Pb doping at 400‐700 K. As a result, the thermoelectric figure of merit is improved in the low‐temperature range, and a ZT value of 0.039 is obtained for the y=0.005 sample at 500 K, which is 77% higher than that of the undoped sample.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Feng Jiang,Tao Feng,Yongbin Zhu,Zhijia Han,Rui Shu,Chen Chen,Yiwen Zhang,Chengliang Xia,Xinzhi Wu,Hulei Yu,Chengyan Liu,Yue Chen,Weishu Liu

DOI: https://doi.org/10.1016/j.mtphys.2022.100835

IF: 11.021

2022-10-01

Materials Today Physics

Abstract:Mg3Sb2-based thermoelectric materials have attracted much interest since the discovery of their excellent n-type thermoelectric performance with excess Mg content and proper dopant. Herein, we proposed a doping diagram for Mg3Sb2-based material in a binary parameters space of electronegativity difference and atomic radius difference of extrinsic elements with Mg atom. Based on this doping diagram, we designed a multiple interstitial doped TMx:Mg3Sb1.5Bi0.5 (TM = CrMnFeCoCu) material, and achieved a high dimensionless figure of merit value of 0.76 at room temperature and 1.83 at 500 °C, respectively. The multiple interstitial dopants significantly suppress the formation of Mg vacancy, which is of great importance in protecting the electrical transport channel and improving the thermal stability. Besides, the mechanical properties are also enhanced due to the random distribution of elements in the matrix, impeding the migration of dislocations. Our work verifies the benefits of maximized sub-lattice disordering through the multi-elements doping strategy in the Mg3Sb1.5Bi0.5 material.

materials science, multidisciplinary,physics, applied
Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Kangkang Yang,Xiangyu Li,Congli Sun,Wei Song,Wenyu Zhao,Qingjie Zhang

DOI: https://doi.org/10.1002/adfm.202315886

IF: 19

2024-04-03

Advanced Functional Materials

Abstract:Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials. An ultra‐stable room temperature thermoelectric performance is obtained. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2‐based alloys toward high room‐temperature thermoelectric performance. n‐type Mg3(Sb, Bi)2 has excellent room temperature thermoelectric performance, which is, however, severely restricted by the negatively charged Mg vacancies that significantly deteriorate the carrier mobility. Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials; In Mg‐rich areas, interstitial Mn dominates which effectively reduces the migration and accumulation of Mg vacancies, while in Mg poor areas, interstitial Mn switches to substitutional sites that directly compensate for the negative charge. All the Mn centers possess Jahn–Teller inactive positions, leading to an ultra‐stable room temperature thermoelectric performance with a leading ZT up to 0.97. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2‐based alloys toward high room‐temperature thermoelectric performance.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Unusual consequences of donor and acceptor doping on the thermoelectric properties of the MgAg<sub>0.97</sub>Sb<sub>0.99</sub> alloy

Unusual Consequences of Donor and Acceptor Doping on the Thermoelectric Properties of the MgAg0.97Sb0.99 Alloy

Optimization of the thermoelectric performance of α-MgAgSb-based materials by Zn-doping

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Hole Doped Α-Mgagsb As Potential Low Temperature Thermoelectric Materials

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Ag-Mg antisite defect induced high thermoelectric performance of α-MgAgSb

Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1.5Bi0.5

High Performance Α-Mgagsb Thermoelectric Materials for Low Temperature Power Generation

Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Realizing high thermoelectric performance in p-type CaZn2Sb2-alloyed Mg3Sb2-based materials via band and point defect engineering

Improving p-type thermoelectric performance of Mg2(Ge,Sn) compounds via solid solution and Ag doping

Enhancing Thermoelectric Performance of Mg3Sb2 Through Substitutional Doping: Sustainable Energy Solutions via First-Principles Calculations

Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

Thermoelectric performance enhancement of Pb-doped α -MgAgSb near room temperature

Role of Pb doping on the thermoelectric properties of Mg3Sb1.8‐yBi0.2Pby alloys

Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping