Abstract:Modulation of the microstructure and configurational entropy tuning are the core stratagem for improving thermoelectric performance. However, the correlation of evolution among the preparation methods, chemical composition, structural defects, configurational entropy, and thermoelectric properties is still unclear. Herein, two series of AgSbTe2-based compounds were synthesized by an equilibrium melting-slow-cooling method and a nonequilibrium melting-quenching-spark plasma sintering (SPS) method, respectively. The equilibrium method results in coarse grains with a size of >300 μm in the samples and a lower defect concentration, leading to higher carrier mobility of 10.66 cm2 V-1 s-1 for (Ag2Te)0.41(Sb2Te3)0.59 compared to the sample synthesized by nonequilibrium preparation of 1.83 cm2 V-1 s-1. Moreover, tuning the chemical composition of nonstoichiometric AgSbTe2 effectively improves the configurational entropy and creates a large number of cation vacancies, which evolve into dense dislocations in the samples. Owing to all of these in conjunction with the strong inharmonic vibration of lattice, an ultralow thermal conductivity of 0.51 W m-1 K-1 at room temperature is achieved for the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method. Due to the enhanced carrier mobility, optimized carrier concentration, and low thermal conductivity, the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method possesses the highest ZT of 1.04 at 500 K, more than 60% higher than 0.64 at 500 K of the same composition synthesized by nonequilibrium preparation.

Enhanced Thermoelectric Performance of Mg-Doped AgSbTe 2 by Inhibiting the Formation of Ag 2 Te

Improving Thermoelectric Performance of AgSbTe2 through Suppression of Ag2Te and Band Convergence via Mg and Ti Codoping

Thermoelectric Transport Performance in p-Type AgSbTe 2 -Based Materials through Entropy Engineering

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Thermoelectric performance enhancement of Pb-doped α -MgAgSb near room temperature

Enhanced Thermoelectric Performance in MnTe Due to Doping and In-Situ Nanocompositing Effects by Ag2S Addition

Enhanced Thermoelectric Performance of p-type AgSbTe2 via Cu Doping

Synergy of grain size and texture effect for high-performance Mg3Sb2-based thermoelectric materials

Suppressing Ag2Te Nanoprecipitates for Enhancing Thermoelectric Efficiency of AgSbTe2

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Enhancing Thermoelectric Performance of AgSbTe 2 -Based Compounds via Microstructure Modulation Combining with Entropy Engineering

Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Inhibiting Mg Diffusion and Evaporation by Forming Mg‐Rich Reservoir at Grain Boundaries Improves the Thermal Stability of N‐Type Mg3Sb2 Thermoelectrics

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2

Significant enhancement of the thermoelectric properties for MnSb2Se4 through Ag doping

Enhancement of thermoelectric performance in Mg 3 (Sb,Bi) 2 through engineered lattice strain and controlled carrier scattering

Improving p-type thermoelectric performance of Mg2(Ge,Sn) compounds via solid solution and Ag doping

High Performance Α-Mgagsb Thermoelectric Materials for Low Temperature Power Generation

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Enhancing the Thermoelectric Performance of Mg2Sn Single Crystals Via Point Defect Engineering and Sb Doping.

Enhanced Thermoelectric Performance of P‐Type (Bi,Sb)2Te3 by Incorporating Non‐Stoichiometric Ag5Te3 and Refining Te‐Se Ratio