Abstract:Summary form only given. Since 1990's, the inductively coupled plasmas (ICP) etching system had been introduced into the research and mass production field for applications of optical waveguide process 1 and optoelectronic devices fabrication 2 . In this paper we rep ort our recent works on ICP etching of GaAs in Cl 2 /Ar/ O 2 chemistry. It was found that, in the ICP chemistry, when the Cl 2 content set to about 75%, only 7.4% of additional O 2 decreases the GaAs etching rate from 949Å/s to 321 Å/s. At this stage, even though the etching rate reduced a lot, the etching mechanism is still ion dominated. Moreover, w hen the O 2 content increases to above 13%, the GaAs etching rate decreases to lower than 2 Å/s even though the ICP power was increased from 400W to 800W, and the GaAs etc hing rate is in direct proportion to the content of Cl 2 in the chemistry. It means that under such conditions, the etching mechanism is totally dominated by reactive neutral radicals. With increasing the O 2 content, the etched surface roughness reduces from higher than 900 Å to only a few angstroms, the etching rate ratio of photoresist to GaAs also changes from lower than 1 to about 85. The above results can be explained by the plasma process in Cl 2 /Ar/O 2 chemistry. The introduced electronegative gas O 2 will go through the following plasma process 3 : e+O 2 → O 2 + 2e; e+O 2 → O- + O; Thus, we can conclude that, when add O 2 to Cl 2 /Ar plasma chemistry, the O 2 will absorb electrons and generate oxygen based species without the capability of etching GaAs. At the s ame time the ion density and the reactive species density for GaAs etching will decrease simultaneously. Thus the etching possibility of the plasma for GaAs will be decreased to a great extent, and the etched surface roughness and the etching rate ratio of photoresist to GaAs were also affected.

Applications of ICP in optoelectronic device fabrication

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Phase Gratings Made with Inductively Coupled Plasma Technology

Deep InP gratings for opto-electronic devices etched by Cl 2/CH 4/Ar inductively coupled plasma

ICP vs CCP in High Aspect Ratio Etching of SiO2 using Ar/C4F8/O2 Gas Mixtures

Fabrication of Fused Silica Phase Gratings with Inductively Coupled Plasma Technology

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

Etching Analysis of Inductively Coupled Plasma Technology for Fabrication of Micro-Optical Elements

Study and Optimization of Room Temperature Inductively Coupled Plasma Etching of Inp Using Cl-2/Ch4/H-2 and Ch4/H-2

Study of the ICP Etching Process on InGaAs/InP Array Devices

Room temperature inductively coupled plasma etching of InP-based semiconductors using Cl2/N2 and Cl2/N 2/Ar mixtures

Inductively Coupled Plasma Etching of GaAs in Cl2/Ar/O2 Chemistry with Photo Resist Mask

NOVEL ETCHING TECHNOLOGY OF INP BY INDUCTIVELY COUPLED PLASMA1

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Deep groove etching for partial reflectors in InP-based monolithically integrated photonic devices

Inductively Coupled Plasma Etching of Subwavelength Grating Structures on GaAs in Cl2/Ar/O2 Environment

Study on ICP Dry Etching Technology for Nanostructure Photonic Device Fabrication

Deep InP Gratings for Opto-Electronic Devices Etched by Cl <sub>2</sub> /CH <sub>4</sub> /Ar Inductively Coupled Plasma

Etching a Surface-Relief Grating into Fused Silica with Inductively Coupled Plasma Technology