Abstract:Zirconium-doped hafnium oxide (HfZrOx) is one of the promising ferroelectric materials for next-generation memory applications. To realize high-performance HfZrOx for next-generation memory applications, the formation of defects in HfZrOx, including oxygen vacancies and interstitials, needs to be optimized, as it can affect the polarization and endurance characteristics of HfZrOx. In this study, we investigated the effects of ozone exposure time during the atomic layer deposition (ALD) process on the polarization and endurance characteristics of 16-nm-thick HfZrOx. HfZrOx films showed different polarization and endurance characteristics depending on the ozone exposure time. HfZrOx deposited using the ozone exposure time of 1 s showed small polarization and large defect concentration. The increase of the ozone exposure time to 2.5 s could reduce the defect concentration and improve the polarization characteristics of HfZrOx. When the ozone exposure time further increased to 4 s, a reduction of polarization was observed in HfZrOx due to the formation of oxygen interstitials and non-ferroelectric monoclinic phases. HfZrOx, with an ozone exposure time of 2.5 s, exhibited the most stable endurance characteristics because of the low initial defect concentration in HfZrOx, which was confirmed by the leakage current analysis. This study shows that the ozone exposure time of ALD needs to be controlled to optimize the formation of defects in HfZrOx films for the improvement of polarization and endurance characteristics.

Enhanced on/off Ratio (4 $\times$ 10$^{\text{5}}\text{)}$ and Robust Endurance ($>$10$^{\text{10}}\text{)}$ in an InGaZnO/ Hf$_{\text{x}}$Zr$_{\text{1-\text{x}}}$O$_{\text{2}}$ Ferroelectric Diode via Defect Engineering

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

Transport Mechanism in Hf 0.5 Zr 0.5 O 2 -Based Ferroelectric Diodes

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization

Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

Large Polarization of Hf 0.5 Zr 0.5 O x Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors

A highly CMOS compatible hafnia-based ferroelectric diode

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Enhancement of the Switchable Diode Effect by the Surface Hydroxylation of Ferroelectric Oxide Thin Films

Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO2 Ferroelectric Thin Films

Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy