Abstract:The work illustrates the manipulation of imprint fields (Eimp) through bottom ILs selection, which can substantially impact the balance between polarization up and down (PUP/PDOWN) in ferroelectric tunnel junctions (FTJs). Specifically, for Al2O3/HZO structure, Eimp stabilizes PUP and destabilizes PDOWN, leading to an asymmetric depolarization behavior. In contrast, for TiO2/HZO structure, Eimp can be mitigated, resulting in a more balanced configuration of PUP/PDOWN. Electro‐resistance (ER) plays a crucial role in the application of hafnia‐based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential in non‐volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances the flexibility in fabricating bilayer FTJs by combining a ferroelectric layer with another oxide layer. Introducing additional layers is necessary to achieve a sufficient storage window for implementing intriguing functions, albeit at the risk of increased depolarization field strength. Hence, selecting a suitable inserted layer becomes paramount. In this study, a novel strategy to enhance the performance of Ge‐based Hf0.5Zr0.5O2 FTJs is presented by incorporating bottom interfacial layers (ILs) with distinct band energy characteristics. The optimized FTJs exhibit significantly improved endurance, lower coercive voltage, and enhanced retention properties. Notably, an intriguing asymmetric retention behavior driven by the imprint field (Eimp) is observed, which can be mitigated by integrating TiO2 ILs. Most importantly, an effective method to manipulate depolarization behavior in hafnia‐based devices through ILs is introduced, leading to enhanced non‐volatility and synaptic behavior in FTJs.

Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf 0.5 Zr 0.5 O 2 /SiO x Interface to Suppress Oxygen Vacancy Generation

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

Experimental investigation of dipole formation and modulation at Hf 0.5 Zr 0.5 O 2 /SiO 2 interface

Ferroelectric-HfO2/Oxide Interfaces, Oxygen Distribution Effect and Implications for Device Performance

Ferroelectric-HfO2/oxide Interfaces, Oxygen Distribution Effects, and Implications for Device Performance

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

HfO 2 –ZrO 2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf 1– x Zr x O 2

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors