Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Fast Co‐Diffusion Process for Bifacial n‐Type Solar Cells

Thin Al2O3 passivated boron emitter of n-type bifacial c-Si solar cells with industrial process

A Novel Processing Technology for High‐Efficiency Silicon Solar Cells

Boron-Doped PECVD Silicon Oxides as Diffusion Sources for Simplified High-Efficiency Solar Cell Fabrication

Utilizing diffusion of boron phosphorus were prepared n-type solar cell technology

Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

Design, realization and loss analysis of efficient low-cost large-area bifacial interdigitated-back-contact solar cells with front floating emitter

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n-Type polysilicon passivating contact for industrial bifacial n-type solar cells

A Novel Strategy for Preparing a Selective Back Surface Field of N-Type Emitter Wrap Through Solar Cells

Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

Presented at the 31st European PV Solar Energy Conference and Exhibition, 14-18 September 2015, Hamburg, Germany OPTIMIZATION OF BBr3 DIFFUSION PROCESSES FOR N-TYPE SILICON SOLAR CELLS

SiO 2 Passivation Layer Grown by Liquid Phase Deposition for N-type Bifacial Silicon Solar Cells

Empirical optimization and implementation of boron emitter on n-type silicon solar cells using BBR3 liquid source

The 18.3% Silicon Solar Cells with Nano-Structured Surface and Rear Emitter

Development of APCVD BSG and POCl3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication

Borosiloxane boron diffusion for p-emitter formation on n-type silicon wafers

A simplified and masking‐free doping process for interdigitated back contact solar cells using an atmospheric pressure chemical vapor deposition borosilicate glass / phosphosilicate glass layer stack for laser doping followed by a high temperature step

Boron Diffusion Of The Silicon Solar Cell With Bbr3