Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD

Naomi Nandakumar,John Rodriguez,Thomas Kluge,Thomas Groβe,Lauretta Fondop,Pradeep Padhamnath,Nagarajan Balaji,Marcel König,Shubham Duttagupta

DOI: https://doi.org/10.1002/pip.3097

2018-12-12

Progress in Photovoltaics: Research and Applications

Abstract:We present n‐type bifacial solar cells with a rear interfacial SiOx/n+:poly‐Si passivating contact (‘monoPoly’ cells) where the interfacial oxide and n+:poly‐Si layers are fabricated using an industrial inline plasma‐enhanced chemical vapor deposition (PECVD) tool. We demonstrate outstanding passivation quality with dark saturation current density (J0) values of approximately 3 fA/cm2 and implied open‐circuit voltage (iVoc) of 730 mV at 1‐sun conditions after firing in an industrial belt furnace. Using a simple solar cell process flow that can be easily adapted for mass production, a peak cell efficiency of 22.8% with a cell open circuit voltage (Voc) of 696 mV is achieved on large‐area, screen‐printed, Czochralski‐silicon (Cz‐Si) solar cells using commercial fire‐through metal pastes. We present n‐type bifacial solar cells with an interfacial SiOx/n+:poly‐Si passivated rear contact where the interfacial oxide and n+:poly‐Si layers are fabricated using an industrial inline plasma‐enhanced chemical vapor deposition (PECVD) tool. Using a simple solar cell process flow that can be easily adapted for mass production, a peak cell efficiency of 22.8% with a cell open circuit voltage (Voc) of 696 mV is achieved on large‐area, screen‐printed, Czochralski‐silicon (Cz‐Si) solar cells using commercial fire‐through metal pastes.