Abstract:Improving the conversion efficiency of n-TOPCon solar cell is still a hot topic. The selective poly-Si based passivating contacts (Poly-SEs) are ideal candidates for reducing the parasitic absorption and contact resistivity of n-type silicon solar cells and for providing better current collection. In this work, we used LPCVD and the POCl 3 tube furnace diffusion methods to fabricate the selective poly-Si based passivating contacts, and studied the influences of key process parameters of the SiO x layer formation process (the oxidation duration ( t oxidation ) and the constant pressure duration ( t pressure )), and POCl 3 tube diffusion process parameters (the POCl 3 -N 2 carrier gas flow rate at the deposition, deposition temperature, drive-in temperature) on the n + -poly-Si profiles, recombination current density ( J 0 ), contact resistivity ( ρ c ) of n-TOPCon solar cells. The results showed that the t oxidation and t pressure had a significant impact on J 0 and ρ c which were mainly related to the distribution number of O and Si 4+ content on the growth of the SiO x layer. And the influence of the drive-in temperature of phosphorus (P) diffusion process on J 0 value is stronger than that of the deposition temperature, which was mainly related to the chemical passivation of SiO x layer induced by P-indiffusion into Si at high temperature. The reduction in the thickness of poly-Si from 110 nm to 30 nm led to an increase in the short-circuit current density ( J sc ) per nanometer of ∼0.0093 mA/cm 2 per nm. The Poly-SEs were fabricated by 3D printing mask technology and secondary LPCVD/phosphorus diffusion with J 0, n+ ≈ 5 fA/cm 2 (n + -poly-Si layer ≈ 50 nm) and J 0, metal,n++ ≈ 73.8 fA/cm 2 (n ++ -poly-Si layer ≈ 110 nm), and the efficiency was improved by 0.12% owing to the increase in J sc value of 0.28 mA/cm 2 . After optimizing the passivation process, the industrial-grade TOPCon bifacial cells reached an efficiency ( E ff ), V oc , J sc , and FF values as high as 25.4%, 721 mV, 42.2 mA/cm 2 , and 83.5%, respectively.

Design and development of front and back contact solar cells with selective poly-Si passivating contact on the front and local Al contact on the rear

Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD

Progress in screen-printed metallization of industrial solar cells with SiOx/poly-Si passivating contacts

Process development and integration of double-side Poly-Si passivated solar cells with printed contacts via LPCVD and ex-situ tube diffusion

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Numerical and experimental exploration towards a 26% efficiency rear-junction n-type silicon solar cell with front local-area and rear full-area polysilicon passivated contacts

Current status and challenges for hole-selective poly-silicon based passivating contacts

Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts

n-Type polysilicon passivating contact for industrial bifacial n-type solar cells

Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget

Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

Quantitative Understanding and Implementation of Screen Printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method

Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells

Optimization of In-situ and Ex-situ doped p+ Passivating Contact for High Efficiency p-TOPCon Solar Cell Application

Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells

High-efficiency n-TOPCon bifacial solar cells with selective poly-Si based passivating contacts

Contact control of Al/Si interface of Si solar cells by local contact opening method

Both-Sided TOPCon Solar Cells – Towards a Lean Process Flow for Silicon Bottom Solar Cells