Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Boron-Doped PECVD Silicon Oxides as Diffusion Sources for Simplified High-Efficiency Solar Cell Fabrication

A Novel Processing Technology for High‐Efficiency Silicon Solar Cells

Phosphorus-diffused polysilicon contacts for solar cells

Borosiloxane boron diffusion for p-emitter formation on n-type silicon wafers

Emitter formation with boron diffusion from PECVD deposited boron-doped silicon oxide for high-efficiency TOPCon solar cells

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

Presented at the 31st European PV Solar Energy Conference and Exhibition, 14-18 September 2015, Hamburg, Germany OPTIMIZATION OF BBr3 DIFFUSION PROCESSES FOR N-TYPE SILICON SOLAR CELLS

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

SiOx/polysilicon selective emitter prepared by PECVD-deposited amorphous silicon plus one-step firing enabling excellent J0,met of < 235 fA/cm2 and ρc of < 2 mΩ·cm2

Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Industrial High Throughput Emitter Formation and Thermal Oxidation for Silicon Solar Cells by the High Temperature Stack Oxidation Approach

Optimized Phosphorus Diffusion Process and Performance Improvement of C-Si Solar Cell by Eliminating SiP Precipitates in the Emitter

Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells

Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts

Research on the Boron Contamination at the P/i Interface of Microcrystalline Silicon Solar Cells Deposited in a Single PECVD Chamber

Efficiency Improvement of Industrial Silicon Solar Cells by the POCl3 Diffusion Process

Gettering Efficacy of APCVD-Based Process Steps for Low-Cost PERT-Type Multicrystalline Silicon Solar Cells

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency

Development of APCVD BSG and POCl3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication