Abstract:Crystalline silicon (c-Si) solar cells with passivation stacks consisting of a polycrystalline silicon (poly-Si) layer and a thin interfacial silicon dioxide (SiO2) layer show high conversion efficiencies. Since the poly-Si layer in this structure acts as a carrier transport layer, high doping of the poly-Si layer is crucial for high conductivity and the efficient transport of charge carriers from the bulk to a metal contact. In this respect, conventional furnace-based high-temperature doping methods are limited by the solid solubility of the dopants in silicon. This limitation particularly affects p-type doping using boron. Previously, we showed that laser activation overcomes this limitation by melting the poly-Si layer, resulting in an active concentration beyond the solubility limit after crystallization. High electrically active boron concentrations ensure low contact resistivity at the (contact) metal/semiconductor interface and allow for the maskless patterning of the poly-Si layer by providing an etch-stop layer in an alkaline solution. However, the high doping concentration degrades during long high-temperature annealing steps. Here, we performed a test of the stability of such a high doping concentration under thermal stress. The active boron concentration shows only a minor reduction during SiNx:H deposition at a moderate temperature and a fast-firing step at a high temperature and with a short exposure time. However, for an annealing time tanneal = 30 min and an annealing temperature 600 °C ≤ Tanneal≤ 1000 °C, the high conductivity is significantly reduced, whereas a high passivation quality requires annealing in this range. We resolve this dilemma by introducing a second, healing laser reactivation step, which re-establishes the original high conductivity of the boron-doped poly-Si and does not degrade the passivation. After a thermal annealing temperature Tanneal = 985 °C, the reactivated layers show high sheet conductance (Gsh) with Gsh = 24 mS sq and high passivation quality, with the implied open-circuit voltage (iVOC) reaching iVOC = 715 mV. Therefore, our novel three-step process consisting of laser activation, thermal annealing, and laser reactivation/healing is suitable for fabricating highly efficient solar cells with p++-poly-Si/SiO2 contact passivation layers.

Utilizing diffusion of boron phosphorus were prepared n-type solar cell technology

Boron Diffusion Of The Silicon Solar Cell With Bbr3

A Novel Processing Technology for High‐Efficiency Silicon Solar Cells

Method for producing a crystalline silicon solar cells using a co-diffusion of boron and phosphorus

Boron-Doped PECVD Silicon Oxides as Diffusion Sources for Simplified High-Efficiency Solar Cell Fabrication

Borosiloxane boron diffusion for p-emitter formation on n-type silicon wafers

Fast Co‐Diffusion Process for Bifacial n‐Type Solar Cells

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts

Presented at the 31st European PV Solar Energy Conference and Exhibition, 14-18 September 2015, Hamburg, Germany OPTIMIZATION OF BBr3 DIFFUSION PROCESSES FOR N-TYPE SILICON SOLAR CELLS

High efficiency N-type double-faced solar cell and preparation method thereof

Doping Silicon Wafers with Boron by Use of Silicon Paste

Superb improvement of boron doping in selective emitter for TOPCon solar cells via boron-doped silicon paste

N+ Emitters Realized Using Ammonium Dihydrogen Phosphate for Silicon Solar Cells

Phosphorus-diffused polysilicon contacts for solar cells

A simplified and masking‐free doping process for interdigitated back contact solar cells using an atmospheric pressure chemical vapor deposition borosilicate glass / phosphosilicate glass layer stack for laser doping followed by a high temperature step

Boron tube diffusion process parameters for high-efficiency n-TOPCon solar cells with selective boron emitters

Empirical optimization and implementation of boron emitter on n-type silicon solar cells using BBR3 liquid source

Thin Al2O3 passivated boron emitter of n-type bifacial c-Si solar cells with industrial process

Low Recombination Firing-Through Al Paste for N-Type Solar Cell with Boron Emitter

Optimized Phosphorus Diffusion Process and Performance Improvement of C-Si Solar Cell by Eliminating SiP Precipitates in the Emitter