Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Fully electrical controllable spin-orbit torque based half-adder

Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages

Complementary logic operation based on electric-field controlled spin-orbit torques

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Anomalous Thermal-Assisted Spin-Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory

Field-free spin–orbit devices via heavy-metal alloy with opposite spin Hall angles for in-memory computing

Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion

Current-induced Magnetization Switching in All-Oxide Heterostructures.

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Field-free Manipulation of Exchange Bias in Perpendicularly Magnetized Pt/Co/IrMn Structures by Spin-Orbit Torque

Current-induced magnetization switching using electrically-insulating spin-torque generator

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Enhancing Spin–orbit Torques with a Low Voltage in Metallic Multi-Layered Heterostructures

Electrical-controllable antiferromagnet-based tunnel junction

An Ultrathin Flexible Programmable Spin Logic Device Based on Spin-Orbit Torque.

Enhancement of torque efficiency and spin Hall angle driven collaboratively by orbital torque and spin–orbit torque

Enhanced Spin-Orbit Torque and Field-Free Switching in Au/TMDs/Ni Hybrid Structures.

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Programmable Spin Logic Based on Spin Hall Effect in A Single Device