Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages

Complementary logic operation based on electric-field controlled spin-orbit torques

Fully electrical controllable spin-orbit torque based half-adder

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

An Ultrathin Flexible Programmable Spin Logic Device Based on Spin-Orbit Torque.

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Predictable gate-field control of spin in altermagnets with spin-layer coupling

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Strongly asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction

Nonvolatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching

Oscillatory spin-orbit torque switching induced by field-like torques

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Computing with spins and magnets

Electrically Reconfigurable 3D Spin‐Orbitronics

Deterministic Spin–Orbit Torque Switching by a Light-Metal Insertion

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction